Abstract
We investigated the enlargement of SiC single crystal during physical vapor transport growth by modifying the shape of graphite lid. The single crystals grown on the cone-shaped platform were larger in diameter than those grown on the conventional one. The enlargement of ingot is discussed in terms of the dual role of polycrystals during crystal growth: (i) it provides a platform for single crystal and (ii) an obstacle to the lateral growth of ingot. The dependence of the broadening angle (β) of single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition found.
| Original language | English |
|---|---|
| Pages (from-to) | 767-772 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 209 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Feb 2 2000 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Bahng, W., Kitou, Y., Nishizawa, S., Yamaguchi, H., Nasir Khan, M., Oyanagi, N., Nishino, S., & Arai, K. (2000). Rapid enlargement of SiC single crystal using a cone-shaped platform. Journal of Crystal Growth, 209(4), 767-772. https://doi.org/10.1016/S0022-0248(99)00754-X