TY - JOUR
T1 - Rapid enlargement of SiC single crystal using a cone-shaped platform
AU - Bahng, W.
AU - Kitou, Y.
AU - Nishizawa, S.
AU - Yamaguchi, H.
AU - Nasir Khan, M.
AU - Oyanagi, N.
AU - Nishino, S.
AU - Arai, K.
N1 - Funding Information:
This work was performed under the management of FED as a part of the MITI NSS Program (R&D of Ultra-Low Loss Power Device Technologies) supported by NEDO.
PY - 2000/2/2
Y1 - 2000/2/2
N2 - We investigated the enlargement of SiC single crystal during physical vapor transport growth by modifying the shape of graphite lid. The single crystals grown on the cone-shaped platform were larger in diameter than those grown on the conventional one. The enlargement of ingot is discussed in terms of the dual role of polycrystals during crystal growth: (i) it provides a platform for single crystal and (ii) an obstacle to the lateral growth of ingot. The dependence of the broadening angle (β) of single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition found.
AB - We investigated the enlargement of SiC single crystal during physical vapor transport growth by modifying the shape of graphite lid. The single crystals grown on the cone-shaped platform were larger in diameter than those grown on the conventional one. The enlargement of ingot is discussed in terms of the dual role of polycrystals during crystal growth: (i) it provides a platform for single crystal and (ii) an obstacle to the lateral growth of ingot. The dependence of the broadening angle (β) of single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition found.
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U2 - 10.1016/S0022-0248(99)00754-X
DO - 10.1016/S0022-0248(99)00754-X
M3 - Article
AN - SCOPUS:0033908508
VL - 209
SP - 767
EP - 772
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -