Rapid enlargement of SiC single crystal using a cone-shaped platform

W. Bahng, Y. Kitou, Shinichi Nishizawa, H. Yamaguchi, M. Nasir Khan, N. Oyanagi, S. Nishino, K. Arai

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We investigated the enlargement of SiC single crystal during physical vapor transport growth by modifying the shape of graphite lid. The single crystals grown on the cone-shaped platform were larger in diameter than those grown on the conventional one. The enlargement of ingot is discussed in terms of the dual role of polycrystals during crystal growth: (i) it provides a platform for single crystal and (ii) an obstacle to the lateral growth of ingot. The dependence of the broadening angle (β) of single crystal on the taper angle (θ) of the cone-shaped platform was also investigated and an optimum angle at a given growth condition found.

Original languageEnglish
Pages (from-to)767-772
Number of pages6
JournalJournal of Crystal Growth
Volume209
Issue number4
DOIs
Publication statusPublished - Feb 2 2000

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Cones
cones
platforms
Single crystals
single crystals
ingots
Ingots
Graphite
Polycrystals
polycrystals
tapering
Crystallization
Crystal growth
crystal growth
graphite
Vapors
vapors

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Bahng, W., Kitou, Y., Nishizawa, S., Yamaguchi, H., Nasir Khan, M., Oyanagi, N., ... Arai, K. (2000). Rapid enlargement of SiC single crystal using a cone-shaped platform. Journal of Crystal Growth, 209(4), 767-772. https://doi.org/10.1016/S0022-0248(99)00754-X

Rapid enlargement of SiC single crystal using a cone-shaped platform. / Bahng, W.; Kitou, Y.; Nishizawa, Shinichi; Yamaguchi, H.; Nasir Khan, M.; Oyanagi, N.; Nishino, S.; Arai, K.

In: Journal of Crystal Growth, Vol. 209, No. 4, 02.02.2000, p. 767-772.

Research output: Contribution to journalArticle

Bahng, W, Kitou, Y, Nishizawa, S, Yamaguchi, H, Nasir Khan, M, Oyanagi, N, Nishino, S & Arai, K 2000, 'Rapid enlargement of SiC single crystal using a cone-shaped platform', Journal of Crystal Growth, vol. 209, no. 4, pp. 767-772. https://doi.org/10.1016/S0022-0248(99)00754-X
Bahng, W. ; Kitou, Y. ; Nishizawa, Shinichi ; Yamaguchi, H. ; Nasir Khan, M. ; Oyanagi, N. ; Nishino, S. ; Arai, K. / Rapid enlargement of SiC single crystal using a cone-shaped platform. In: Journal of Crystal Growth. 2000 ; Vol. 209, No. 4. pp. 767-772.
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