Rapid growth of radish sprouts using low pressure O2 radio frequency plasma irradiation

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We compared growth enhancement of radish induced by O2, air, and Ar plasma irradiation. The average length of radish sprouts cultivated for 4 days after O2 plasma irradiation is 70% longer than that of sprouts without irradiation. The O2 plasma irradiation is more effective in enhancing growth than air and Ar radio frequency plasma irradiation. Cell morphology and cell size of sprouts with O2 plasma irradiation is nearly the same as those without irradiation. These results suggest that plasma induced acceleration of cell proliferation brings about the rapid growth.

Original languageEnglish
Title of host publicationPlasma Processing and Diagnostics for Life Sciences
Pages61-66
Number of pages6
DOIs
Publication statusPublished - 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1469
ISSN (Print)0272-9172

Other

Other2012 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Rapid growth of radish sprouts using low pressure O<sub>2</sub> radio frequency plasma irradiation'. Together they form a unique fingerprint.

Cite this