TY - JOUR
T1 - Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors
AU - Bermundo, Juan Paolo S.
AU - Kulchaisit, Chaiyanan
AU - Ishikawa, Yasuaki
AU - Fujii, Mami N.
AU - Ikenoue, Hiroshi
AU - Uraoka, Yukiharu
N1 - Funding Information:
The authors thank Nissan Chemical Corporation for providing the IZO precursors
Publisher Copyright:
© 2019 IOP Publishing Ltd.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020
Y1 - 2020
N2 - We demonstrate the rapid (<100 ns) activation and enhancement of solution-processed InZnO thin-film transistors (TFT) via a photo-assisted process: excimer laser annealing (ELA). A single shot is sufficient to enhance mobility from 0.19 cm2 V-1 s-1 to 3.91 cm2 V-1 s-1. Through multiphysics simulation, we confirmed that the process is instantaneous (<100 ns) and induces low substrate temperature suitable for flexible substrates. Analysis of optical properties, elemental concentration, and bonding changes after ELA revealed an improved metal-oxide formation and effective reduction of precursor-related impurities and oxygen vacancy traps. These demonstrate ELA's potential for high-throughput fabrication of solution-processed devices for large-area, transparent, and flexible electronics.
AB - We demonstrate the rapid (<100 ns) activation and enhancement of solution-processed InZnO thin-film transistors (TFT) via a photo-assisted process: excimer laser annealing (ELA). A single shot is sufficient to enhance mobility from 0.19 cm2 V-1 s-1 to 3.91 cm2 V-1 s-1. Through multiphysics simulation, we confirmed that the process is instantaneous (<100 ns) and induces low substrate temperature suitable for flexible substrates. Analysis of optical properties, elemental concentration, and bonding changes after ELA revealed an improved metal-oxide formation and effective reduction of precursor-related impurities and oxygen vacancy traps. These demonstrate ELA's potential for high-throughput fabrication of solution-processed devices for large-area, transparent, and flexible electronics.
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U2 - 10.1088/1361-6463/ab5085
DO - 10.1088/1361-6463/ab5085
M3 - Article
AN - SCOPUS:85077779136
SN - 0022-3727
VL - 53
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
IS - 4
M1 - 045102
ER -