Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires

Zetao Zhu, Masaru Suzuki, Kazuki Nagashima, Hideto Yoshida, Masaki Kanai, Gang Meng, Hiroshi Anzai, Fuwei Zhuge, Yong He, Mickaël Boudot, Seiji Takeda, Takeshi Yanagida

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Vapor-liquid-solid (VLS) growth process of single crystalline metal oxide nanowires has proven the excellent ability to tailor the nanostructures. However, the VLS process of metal oxides in general requires relatively high growth temperatures, which essentially limits the application range. Here we propose a rational concept to reduce the growth temperature in VLS growth process of various metal oxide nanowires. Molecular dynamics (MD) simulation theoretically predicts that it is possible to reduce the growth temperature in VLS process of metal oxide nanowires by precisely controlling the vapor flux. This concept is based on the temperature dependent "material flux window" that the appropriate vapor flux for VLS process of nanowire growth decreases with decreasing the growth temperature. Experimentally, we found the applicability of this concept for reducing the growth temperature of VLS processes for various metal oxides including MgO, SnO2, and ZnO. In addition, we show the successful applications of this concept to VLS nanowire growths of metal oxides onto tin-doped indium oxide (ITO) glass and polyimide (PI) substrates, which require relatively low growth temperatures.

Original languageEnglish
Pages (from-to)7495-7502
Number of pages8
JournalNano Letters
Volume16
Issue number12
DOIs
Publication statusPublished - Dec 14 2016

Fingerprint

Growth temperature
Oxides
Nanowires
metal oxides
nanowires
Metals
Vapors
vapors
Liquids
liquids
temperature
Fluxes
ITO glass
Tin oxides
Polyimides
Indium
ITO (semiconductors)
polyimides
Molecular dynamics
indium oxides

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires. / Zhu, Zetao; Suzuki, Masaru; Nagashima, Kazuki; Yoshida, Hideto; Kanai, Masaki; Meng, Gang; Anzai, Hiroshi; Zhuge, Fuwei; He, Yong; Boudot, Mickaël; Takeda, Seiji; Yanagida, Takeshi.

In: Nano Letters, Vol. 16, No. 12, 14.12.2016, p. 7495-7502.

Research output: Contribution to journalArticle

Zhu, Z, Suzuki, M, Nagashima, K, Yoshida, H, Kanai, M, Meng, G, Anzai, H, Zhuge, F, He, Y, Boudot, M, Takeda, S & Yanagida, T 2016, 'Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires', Nano Letters, vol. 16, no. 12, pp. 7495-7502. https://doi.org/10.1021/acs.nanolett.6b03227
Zhu, Zetao ; Suzuki, Masaru ; Nagashima, Kazuki ; Yoshida, Hideto ; Kanai, Masaki ; Meng, Gang ; Anzai, Hiroshi ; Zhuge, Fuwei ; He, Yong ; Boudot, Mickaël ; Takeda, Seiji ; Yanagida, Takeshi. / Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires. In: Nano Letters. 2016 ; Vol. 16, No. 12. pp. 7495-7502.
@article{6b89ef789e0a44f5ac43eca4977c7e16,
title = "Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires",
abstract = "Vapor-liquid-solid (VLS) growth process of single crystalline metal oxide nanowires has proven the excellent ability to tailor the nanostructures. However, the VLS process of metal oxides in general requires relatively high growth temperatures, which essentially limits the application range. Here we propose a rational concept to reduce the growth temperature in VLS growth process of various metal oxide nanowires. Molecular dynamics (MD) simulation theoretically predicts that it is possible to reduce the growth temperature in VLS process of metal oxide nanowires by precisely controlling the vapor flux. This concept is based on the temperature dependent {"}material flux window{"} that the appropriate vapor flux for VLS process of nanowire growth decreases with decreasing the growth temperature. Experimentally, we found the applicability of this concept for reducing the growth temperature of VLS processes for various metal oxides including MgO, SnO2, and ZnO. In addition, we show the successful applications of this concept to VLS nanowire growths of metal oxides onto tin-doped indium oxide (ITO) glass and polyimide (PI) substrates, which require relatively low growth temperatures.",
author = "Zetao Zhu and Masaru Suzuki and Kazuki Nagashima and Hideto Yoshida and Masaki Kanai and Gang Meng and Hiroshi Anzai and Fuwei Zhuge and Yong He and Micka{\"e}l Boudot and Seiji Takeda and Takeshi Yanagida",
year = "2016",
month = "12",
day = "14",
doi = "10.1021/acs.nanolett.6b03227",
language = "English",
volume = "16",
pages = "7495--7502",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "12",

}

TY - JOUR

T1 - Rational Concept for Reducing Growth Temperature in Vapor-Liquid-Solid Process of Metal Oxide Nanowires

AU - Zhu, Zetao

AU - Suzuki, Masaru

AU - Nagashima, Kazuki

AU - Yoshida, Hideto

AU - Kanai, Masaki

AU - Meng, Gang

AU - Anzai, Hiroshi

AU - Zhuge, Fuwei

AU - He, Yong

AU - Boudot, Mickaël

AU - Takeda, Seiji

AU - Yanagida, Takeshi

PY - 2016/12/14

Y1 - 2016/12/14

N2 - Vapor-liquid-solid (VLS) growth process of single crystalline metal oxide nanowires has proven the excellent ability to tailor the nanostructures. However, the VLS process of metal oxides in general requires relatively high growth temperatures, which essentially limits the application range. Here we propose a rational concept to reduce the growth temperature in VLS growth process of various metal oxide nanowires. Molecular dynamics (MD) simulation theoretically predicts that it is possible to reduce the growth temperature in VLS process of metal oxide nanowires by precisely controlling the vapor flux. This concept is based on the temperature dependent "material flux window" that the appropriate vapor flux for VLS process of nanowire growth decreases with decreasing the growth temperature. Experimentally, we found the applicability of this concept for reducing the growth temperature of VLS processes for various metal oxides including MgO, SnO2, and ZnO. In addition, we show the successful applications of this concept to VLS nanowire growths of metal oxides onto tin-doped indium oxide (ITO) glass and polyimide (PI) substrates, which require relatively low growth temperatures.

AB - Vapor-liquid-solid (VLS) growth process of single crystalline metal oxide nanowires has proven the excellent ability to tailor the nanostructures. However, the VLS process of metal oxides in general requires relatively high growth temperatures, which essentially limits the application range. Here we propose a rational concept to reduce the growth temperature in VLS growth process of various metal oxide nanowires. Molecular dynamics (MD) simulation theoretically predicts that it is possible to reduce the growth temperature in VLS process of metal oxide nanowires by precisely controlling the vapor flux. This concept is based on the temperature dependent "material flux window" that the appropriate vapor flux for VLS process of nanowire growth decreases with decreasing the growth temperature. Experimentally, we found the applicability of this concept for reducing the growth temperature of VLS processes for various metal oxides including MgO, SnO2, and ZnO. In addition, we show the successful applications of this concept to VLS nanowire growths of metal oxides onto tin-doped indium oxide (ITO) glass and polyimide (PI) substrates, which require relatively low growth temperatures.

UR - http://www.scopus.com/inward/record.url?scp=85006413330&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85006413330&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.6b03227

DO - 10.1021/acs.nanolett.6b03227

M3 - Article

AN - SCOPUS:85006413330

VL - 16

SP - 7495

EP - 7502

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 12

ER -