Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

R. S. Kern, Tanaka Satoru, L. B. Rowland, R. F. Davis

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Thin films of silicon carbide (SiC) have been grown at 1000-1500°C on vicinal and on-axis α(6H)-SiC(0 0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Growth on on-axis and off-axis 6H-SiC(0 0 0 1) substrates using the SiH4-C2H4 system resulted in 3C-SiC(1 1 1) epilayers under all conditions of reactant gas flow and temperature. By adding H2 to the SiH4-C2H4 system, films of 6H-SiC(0 0 0 1) were deposited on vicinal 6H-SiC substrates at deposition temperature ≥1350°C. Kinetic analysis of the deposition of 3C-SiC films with respect to reactant inputs and growth temperature is presented. From the data, the deposition of 3C-SiC appears to be surface-reaction-controlled. Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) was used to determine the crystalline quality, surface character and epilayer polytype.

Original languageEnglish
Pages (from-to)581-593
Number of pages13
JournalJournal of Crystal Growth
Volume183
Issue number4
DOIs
Publication statusPublished - Jan 1 1998

Fingerprint

Gas source molecular beam epitaxy
Silicon carbide
Reaction kinetics
silicon carbides
reaction kinetics
molecular beam epitaxy
gases
Epilayers
Substrates
Reflection high energy electron diffraction
silicon carbide
Surface reactions
Growth temperature
High resolution transmission electron microscopy
gas temperature
high energy electrons
surface reactions
Surface properties
gas flow
Flow of gases

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy. / Kern, R. S.; Satoru, Tanaka; Rowland, L. B.; Davis, R. F.

In: Journal of Crystal Growth, Vol. 183, No. 4, 01.01.1998, p. 581-593.

Research output: Contribution to journalArticle

Kern, R. S. ; Satoru, Tanaka ; Rowland, L. B. ; Davis, R. F. / Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy. In: Journal of Crystal Growth. 1998 ; Vol. 183, No. 4. pp. 581-593.
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