Abstract
Thin films of silicon carbide (SiC) have been grown at 1000-1500°C on vicinal and on-axis α(6H)-SiC(0 0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Growth on on-axis and off-axis 6H-SiC(0 0 0 1) substrates using the SiH4-C2H4 system resulted in 3C-SiC(1 1 1) epilayers under all conditions of reactant gas flow and temperature. By adding H2 to the SiH4-C2H4 system, films of 6H-SiC(0 0 0 1) were deposited on vicinal 6H-SiC substrates at deposition temperature ≥1350°C. Kinetic analysis of the deposition of 3C-SiC films with respect to reactant inputs and growth temperature is presented. From the data, the deposition of 3C-SiC appears to be surface-reaction-controlled. Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) was used to determine the crystalline quality, surface character and epilayer polytype.
| Original language | English |
|---|---|
| Pages (from-to) | 581-593 |
| Number of pages | 13 |
| Journal | Journal of Crystal Growth |
| Volume | 183 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jan 1 1998 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy. / Kern, R. S.; Tanaka, S.; Rowland, L. B.; Davis, R. F.
In: Journal of Crystal Growth, Vol. 183, No. 4, 01.01.1998, p. 581-593.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
AU - Kern, R. S.
AU - Tanaka, S.
AU - Rowland, L. B.
AU - Davis, R. F.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - Thin films of silicon carbide (SiC) have been grown at 1000-1500°C on vicinal and on-axis α(6H)-SiC(0 0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Growth on on-axis and off-axis 6H-SiC(0 0 0 1) substrates using the SiH4-C2H4 system resulted in 3C-SiC(1 1 1) epilayers under all conditions of reactant gas flow and temperature. By adding H2 to the SiH4-C2H4 system, films of 6H-SiC(0 0 0 1) were deposited on vicinal 6H-SiC substrates at deposition temperature ≥1350°C. Kinetic analysis of the deposition of 3C-SiC films with respect to reactant inputs and growth temperature is presented. From the data, the deposition of 3C-SiC appears to be surface-reaction-controlled. Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) was used to determine the crystalline quality, surface character and epilayer polytype.
AB - Thin films of silicon carbide (SiC) have been grown at 1000-1500°C on vicinal and on-axis α(6H)-SiC(0 0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Growth on on-axis and off-axis 6H-SiC(0 0 0 1) substrates using the SiH4-C2H4 system resulted in 3C-SiC(1 1 1) epilayers under all conditions of reactant gas flow and temperature. By adding H2 to the SiH4-C2H4 system, films of 6H-SiC(0 0 0 1) were deposited on vicinal 6H-SiC substrates at deposition temperature ≥1350°C. Kinetic analysis of the deposition of 3C-SiC films with respect to reactant inputs and growth temperature is presented. From the data, the deposition of 3C-SiC appears to be surface-reaction-controlled. Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) was used to determine the crystalline quality, surface character and epilayer polytype.
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UR - http://www.scopus.com/inward/citedby.url?scp=0032003180&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(97)00471-5
DO - 10.1016/S0022-0248(97)00471-5
M3 - Article
AN - SCOPUS:0032003180
VL - 183
SP - 581
EP - 593
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -