TY - JOUR
T1 - Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
AU - Kern, R. S.
AU - Tanaka, S.
AU - Rowland, L. B.
AU - Davis, R. F.
N1 - Funding Information:
The authors wishes to acknowledge the Office of Naval Research for the sponsorship of this research under Grant No. N00014-92-J-1500 and Cree Research, Inc. for providing the 6H-SiC(0 0 0 1) substrates. We also wish to express our appreciation to A. Reisman, H.H. Lamb and C. Wolden of NCSU and J.C. Angus of CWRU for helpful discussions as well as K. Jfirrendahl of NCSU for careful review of this manuscript.
PY - 1998/2
Y1 - 1998/2
N2 - Thin films of silicon carbide (SiC) have been grown at 1000-1500°C on vicinal and on-axis α(6H)-SiC(0 0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Growth on on-axis and off-axis 6H-SiC(0 0 0 1) substrates using the SiH4-C2H4 system resulted in 3C-SiC(1 1 1) epilayers under all conditions of reactant gas flow and temperature. By adding H2 to the SiH4-C2H4 system, films of 6H-SiC(0 0 0 1) were deposited on vicinal 6H-SiC substrates at deposition temperature ≥1350°C. Kinetic analysis of the deposition of 3C-SiC films with respect to reactant inputs and growth temperature is presented. From the data, the deposition of 3C-SiC appears to be surface-reaction-controlled. Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) was used to determine the crystalline quality, surface character and epilayer polytype.
AB - Thin films of silicon carbide (SiC) have been grown at 1000-1500°C on vicinal and on-axis α(6H)-SiC(0 0 0 1) substrates by gas-source molecular-beam epitaxy (GSMBE). Growth on on-axis and off-axis 6H-SiC(0 0 0 1) substrates using the SiH4-C2H4 system resulted in 3C-SiC(1 1 1) epilayers under all conditions of reactant gas flow and temperature. By adding H2 to the SiH4-C2H4 system, films of 6H-SiC(0 0 0 1) were deposited on vicinal 6H-SiC substrates at deposition temperature ≥1350°C. Kinetic analysis of the deposition of 3C-SiC films with respect to reactant inputs and growth temperature is presented. From the data, the deposition of 3C-SiC appears to be surface-reaction-controlled. Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) was used to determine the crystalline quality, surface character and epilayer polytype.
UR - http://www.scopus.com/inward/record.url?scp=0032003180&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032003180&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(97)00471-5
DO - 10.1016/S0022-0248(97)00471-5
M3 - Article
AN - SCOPUS:0032003180
VL - 183
SP - 581
EP - 593
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -