Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy

X. Q. Shen, Tanaka Satoru, S. Iwai, Y. Aoyagi

Research output: Contribution to journalArticle

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Abstract

In situ reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations were performed to monitor and characterize the growth processes and surface morphology of GaN on AlxGa1-xN surface in gas-source molecular beam epitaxy. It was found that the growth mode can be changed by introducing Si before GaN growth, where the Si is believed to play an important role in the change of the AlxGa1-xN surface free energy. Without introducing Si, the GaN growth mode was two-dimensional and (1 × 3) reconstruction was observed. The growth mode of GaN was changed from two-dimensional to three-dimensional by introducing Si on the AlxGa1-xN surface. Nanoscale GaN dots were successfully formed on AlxGa1-xN/6H-SiC(0 0 0 1) surfaces. Furthermore, the density of the GaN dots was found to be dependent on the amount of Si dose and the growth temperature.

Original languageEnglish
Pages (from-to)147-152
Number of pages6
JournalJournal of Crystal Growth
Volume189-190
DOIs
Publication statusPublished - Jun 15 1998
Externally publishedYes

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Gas source molecular beam epitaxy
molecular beam epitaxy
gases
Reflection high energy electron diffraction
Growth temperature
Free energy
Surface morphology
Atomic force microscopy
high energy electrons
aluminum gallium nitride
electron diffraction
free energy
atomic force microscopy
dosage

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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Real-time observations of the GaN dot formation by controlling growth mode on the AlGaN surface in gas-source molecular beam epitaxy. / Shen, X. Q.; Satoru, Tanaka; Iwai, S.; Aoyagi, Y.

In: Journal of Crystal Growth, Vol. 189-190, 15.06.1998, p. 147-152.

Research output: Contribution to journalArticle

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AB - In situ reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations were performed to monitor and characterize the growth processes and surface morphology of GaN on AlxGa1-xN surface in gas-source molecular beam epitaxy. It was found that the growth mode can be changed by introducing Si before GaN growth, where the Si is believed to play an important role in the change of the AlxGa1-xN surface free energy. Without introducing Si, the GaN growth mode was two-dimensional and (1 × 3) reconstruction was observed. The growth mode of GaN was changed from two-dimensional to three-dimensional by introducing Si on the AlxGa1-xN surface. Nanoscale GaN dots were successfully formed on AlxGa1-xN/6H-SiC(0 0 0 1) surfaces. Furthermore, the density of the GaN dots was found to be dependent on the amount of Si dose and the growth temperature.

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