Realization of an ultra-flat silica surface with angstrom-scale average roughness using nonadiabatic optical near-field etching

T. Yatsui, K. Hirata, W. Nomura, Y. Tabata, M. Ohtsu

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

We propose a new method of optical near-field etching where a nonadiabatic process is applied to a synthetic silica substrate using a continuum wave laser (λ=532 nm) with a Cl2 gas source. Because the absorption band edge energy of Cl2 is higher than the photon energy of the light source, we preclude the conventional adiabatic photochemical reaction. An optical near field, generated on the nanometrically rough substrate, induces the nonadiabatic chemical reaction to the Cl2 molecules and thereby selectively etches away the roughness, leaving an ultra-flat synthetic silica surface with a minimum average surface roughness R a of 1.37 Å.

Original languageEnglish
Pages (from-to)55-57
Number of pages3
JournalApplied Physics B: Lasers and Optics
Volume93
Issue number1
DOIs
Publication statusPublished - Oct 1 2008

Fingerprint

near fields
roughness
etching
silicon dioxide
photochemical reactions
chemical reactions
light sources
surface roughness
heat transfer
continuums
absorption spectra
energy
photons
gases
lasers
molecules

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Realization of an ultra-flat silica surface with angstrom-scale average roughness using nonadiabatic optical near-field etching. / Yatsui, T.; Hirata, K.; Nomura, W.; Tabata, Y.; Ohtsu, M.

In: Applied Physics B: Lasers and Optics, Vol. 93, No. 1, 01.10.2008, p. 55-57.

Research output: Contribution to journalArticle

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