Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes

Hiroki Ago, Carlo M. Orofeo, Naoki Ishigami, Naoki Yoshihara, Masaharu Tsuji

    Research output: Contribution to journalArticle

    Abstract

    Horizontally aligned growth of single-walled carbon nanotubes (SWNTs) on a substrate is an essential step towards the formation of rational architectures for electronic applications. We present our recent progress in horizontally aligned SWNT growth on a single-crystal sapphire substrate, in which two different alignment mechanisms, lattice-oriented growth and step-templated growth, were observed. Characterization of aligned SWNTs on sapphire suggests the crystal plane dependence of diameter and chiral angle distributions. In addition, our recent achievements in aligned SWNT growth on a surface-modified Si substrate is also demonstrated.

    Original languageEnglish
    Pages (from-to)321-330
    Number of pages10
    JournalSensors and Materials
    Volume21
    Issue number7
    Publication statusPublished - Nov 27 2009

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    All Science Journal Classification (ASJC) codes

    • Instrumentation
    • Materials Science(all)

    Cite this

    Ago, H., Orofeo, C. M., Ishigami, N., Yoshihara, N., & Tsuji, M. (2009). Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes. Sensors and Materials, 21(7), 321-330.