Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes

Hiroki Ago, Carlo M. Orofeo, Naoki Ishigami, Naoki Yoshihara, Masaharu Tsuji

    Research output: Contribution to journalArticle

    Abstract

    Horizontally aligned growth of single-walled carbon nanotubes (SWNTs) on a substrate is an essential step towards the formation of rational architectures for electronic applications. We present our recent progress in horizontally aligned SWNT growth on a single-crystal sapphire substrate, in which two different alignment mechanisms, lattice-oriented growth and step-templated growth, were observed. Characterization of aligned SWNTs on sapphire suggests the crystal plane dependence of diameter and chiral angle distributions. In addition, our recent achievements in aligned SWNT growth on a surface-modified Si substrate is also demonstrated.

    Original languageEnglish
    Pages (from-to)321-330
    Number of pages10
    JournalSensors and Materials
    Volume21
    Issue number7
    Publication statusPublished - 2009

    Fingerprint

    Single-walled carbon nanotubes (SWCN)
    carbon nanotubes
    Aluminum Oxide
    Sapphire
    sapphire
    Substrates
    alignment
    Single crystals
    Crystals
    single crystals
    electronics
    crystals

    All Science Journal Classification (ASJC) codes

    • Instrumentation
    • Materials Science(all)

    Cite this

    Ago, H., Orofeo, C. M., Ishigami, N., Yoshihara, N., & Tsuji, M. (2009). Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes. Sensors and Materials, 21(7), 321-330.

    Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes. / Ago, Hiroki; Orofeo, Carlo M.; Ishigami, Naoki; Yoshihara, Naoki; Tsuji, Masaharu.

    In: Sensors and Materials, Vol. 21, No. 7, 2009, p. 321-330.

    Research output: Contribution to journalArticle

    Ago, H, Orofeo, CM, Ishigami, N, Yoshihara, N & Tsuji, M 2009, 'Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes', Sensors and Materials, vol. 21, no. 7, pp. 321-330.
    Ago, Hiroki ; Orofeo, Carlo M. ; Ishigami, Naoki ; Yoshihara, Naoki ; Tsuji, Masaharu. / Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes. In: Sensors and Materials. 2009 ; Vol. 21, No. 7. pp. 321-330.
    @article{61505c43e78c409b9ce105adb52bb354,
    title = "Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes",
    abstract = "Horizontally aligned growth of single-walled carbon nanotubes (SWNTs) on a substrate is an essential step towards the formation of rational architectures for electronic applications. We present our recent progress in horizontally aligned SWNT growth on a single-crystal sapphire substrate, in which two different alignment mechanisms, lattice-oriented growth and step-templated growth, were observed. Characterization of aligned SWNTs on sapphire suggests the crystal plane dependence of diameter and chiral angle distributions. In addition, our recent achievements in aligned SWNT growth on a surface-modified Si substrate is also demonstrated.",
    author = "Hiroki Ago and Orofeo, {Carlo M.} and Naoki Ishigami and Naoki Yoshihara and Masaharu Tsuji",
    year = "2009",
    language = "English",
    volume = "21",
    pages = "321--330",
    journal = "Sensors and Materials",
    issn = "0914-4935",
    publisher = "M Y U Scientific Publishing Division",
    number = "7",

    }

    TY - JOUR

    T1 - Recent developments in technology for horizontally aligned growth of single-walled carbon nanotubes

    AU - Ago, Hiroki

    AU - Orofeo, Carlo M.

    AU - Ishigami, Naoki

    AU - Yoshihara, Naoki

    AU - Tsuji, Masaharu

    PY - 2009

    Y1 - 2009

    N2 - Horizontally aligned growth of single-walled carbon nanotubes (SWNTs) on a substrate is an essential step towards the formation of rational architectures for electronic applications. We present our recent progress in horizontally aligned SWNT growth on a single-crystal sapphire substrate, in which two different alignment mechanisms, lattice-oriented growth and step-templated growth, were observed. Characterization of aligned SWNTs on sapphire suggests the crystal plane dependence of diameter and chiral angle distributions. In addition, our recent achievements in aligned SWNT growth on a surface-modified Si substrate is also demonstrated.

    AB - Horizontally aligned growth of single-walled carbon nanotubes (SWNTs) on a substrate is an essential step towards the formation of rational architectures for electronic applications. We present our recent progress in horizontally aligned SWNT growth on a single-crystal sapphire substrate, in which two different alignment mechanisms, lattice-oriented growth and step-templated growth, were observed. Characterization of aligned SWNTs on sapphire suggests the crystal plane dependence of diameter and chiral angle distributions. In addition, our recent achievements in aligned SWNT growth on a surface-modified Si substrate is also demonstrated.

    UR - http://www.scopus.com/inward/record.url?scp=70450196717&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=70450196717&partnerID=8YFLogxK

    M3 - Article

    VL - 21

    SP - 321

    EP - 330

    JO - Sensors and Materials

    JF - Sensors and Materials

    SN - 0914-4935

    IS - 7

    ER -