Recent developments of numerical calculation in crystal growth of SiC

Koichi Kakimoto, Satoshi Nakano

Research output: Contribution to journalReview article

Abstract

The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C-or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H-and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H-and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C-and Si-faces of 6H-SiC were used as seed crystals. 6H-SiC was preferred to grow rather than 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.

Original languageEnglish
Pages (from-to)313-320
Number of pages8
JournalJournal of the Vacuum Society of Japan
Volume60
Issue number8
DOIs
Publication statusPublished - Jan 1 2017

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Crystallization
Crystal growth
crystal growth
seeds
Crystals
crystals
Aluminum
vapors
aluminum
nitrogen
Nitrogen
Vapors
doped crystals
mass transfer
furnaces
heat transfer
nucleation
Furnaces
Nucleation
impurities

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces
  • Spectroscopy

Cite this

Recent developments of numerical calculation in crystal growth of SiC. / Kakimoto, Koichi; Nakano, Satoshi.

In: Journal of the Vacuum Society of Japan, Vol. 60, No. 8, 01.01.2017, p. 313-320.

Research output: Contribution to journalReview article

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abstract = "The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C-or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H-and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H-and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C-and Si-faces of 6H-SiC were used as seed crystals. 6H-SiC was preferred to grow rather than 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.",
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AB - The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C-or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H-and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H-and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C-and Si-faces of 6H-SiC were used as seed crystals. 6H-SiC was preferred to grow rather than 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.

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