TY - JOUR
T1 - Recent Progress of Atomic Layer Technology in Spintronics
T2 - Mechanism, Materials and Prospects
AU - Tsai, Yuanlu
AU - Li, Zhiteng
AU - Hu, Shaojie
N1 - Funding Information:
This work is partially supported by National Key Research Program of China (grant number 2017YFA0206202), the National Natural Science Foundation for Young Scholar of China (grant number 51601139), the International Postdoctoral Exchange Fellowship Program (20190083), and the Natural Science Foundation of Shaanxi Province (2021JM-022).
Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2022/2/1
Y1 - 2022/2/1
N2 - The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics.
AB - The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics.
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U2 - 10.3390/nano12040661
DO - 10.3390/nano12040661
M3 - Article
AN - SCOPUS:85124580996
VL - 12
JO - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 4
M1 - 661
ER -