TY - GEN
T1 - Recent progress of junction technology for germanium CMOS
AU - Nishimura, Tomonori
AU - Lee, Choong Hyun
AU - Nakamura, Toshimitsu
AU - Yajima, Takeaki
AU - Nagashio, Kosuke
AU - Kita, Koji
AU - Toriumi, Akira
N1 - Publisher Copyright:
© 2015 Japan Society of Applied Physics - JSAP.
PY - 2016/5/9
Y1 - 2016/5/9
N2 - To realize scaled Ge CMOS device, there are several challenges of junction formation in nMOSFET. (Fermi level pinning, activation and diffusion of n-type impurities and junction leakage, etc.) In this paper, we report recent progresses of controllability of band alignment at metal/Ge interface, understanding of n-type impurity activation in Ge, and impact of oxygen in Ge on n+/p junction leakage.
AB - To realize scaled Ge CMOS device, there are several challenges of junction formation in nMOSFET. (Fermi level pinning, activation and diffusion of n-type impurities and junction leakage, etc.) In this paper, we report recent progresses of controllability of band alignment at metal/Ge interface, understanding of n-type impurity activation in Ge, and impact of oxygen in Ge on n+/p junction leakage.
UR - http://www.scopus.com/inward/record.url?scp=84973640320&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84973640320&partnerID=8YFLogxK
U2 - 10.1109/IWJT.2015.7467098
DO - 10.1109/IWJT.2015.7467098
M3 - Conference contribution
AN - SCOPUS:84973640320
T3 - 15th International Workshop on Junction Technology, IWJT 2015
SP - 65
EP - 68
BT - 15th International Workshop on Junction Technology, IWJT 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th International Workshop on Junction Technology, IWJT 2015
Y2 - 11 June 2015 through 12 June 2015
ER -