Recent progress of SiC hot-wall epitaxy and its modeling

Shinichi Nishizawa, Michel Pons

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

From the engineering point of view, SiC hot-wall epitaxy is a very important process in SiC semiconductor processes. There are lots of experimental reports on SiC hot-wall epitaxy. They discussed the growth rate, surface morphology, doping concentration, etc. Recently, the effect of face polarity is also made clear. However, each report mentioned the particular results that strongly depend on the experimental conditions and reactor design. In addition, the discussion with inlet condition such as source gas C/Si ratio, not the depositing surface condition, leads to the confusion. In order to understand and try to design and optimize the hot-wall CVD reactor, a numerical approach is attempted. The authors have tried to make it clear that depositing surface condition might be a universal parameter of SiC CVD, and the numerical simulation could predict the growth rate, surface morphology and doping concentration by taking account of the depositing surface condition. In this study, at first, the recent progress of SiC hot-wall epitaxy in experiment is summarized. Then, the present status of its numerical modeling is explained.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages127-134
Number of pages8
Volume527-529
EditionPART 1
Publication statusPublished - 2006
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Recent progress of SiC hot-wall epitaxy and its modeling'. Together they form a unique fingerprint.

Cite this