Recent progress of SiGe heterostructure technologies for novel devices

Masanobu Miyao; Hiroshi Kanno; Taizoh Sadoh

Recent progress of SiGe heterostructure technologies for novel devices

Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.

Original language	English
Title of host publication	Dielectrics for Nanosystems II
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Pages	165-179
Number of pages	15
Volume	2
Edition	1
Publication status	Published - Jul 3 2006
Event	2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States Duration: May 7 2006 → May 12 2006

Other

Other	2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
Country/Territory	United States
City	Denver, CO
Period	5/7/06 → 5/12/06

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Miyao, M, Kanno, H & Sadoh, T 2006, Recent progress of SiGe heterostructure technologies for novel devices. in Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. 1 edn, vol. 2, pp. 165-179, 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society, Denver, CO, United States, 5/7/06.

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AB - The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.

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Y2 - 7 May 2006 through 12 May 2006

ER -

Recent progress of SiGe heterostructure technologies for novel devices

Abstract

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All Science Journal Classification (ASJC) codes

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