Abstract
The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.
| Original language | English |
|---|---|
| Title of host publication | Dielectrics for Nanosystems II |
| Subtitle of host publication | Materials Science, Processing, Reliability, and Manufacturing |
| Pages | 165-179 |
| Number of pages | 15 |
| Volume | 2 |
| Edition | 1 |
| Publication status | Published - Jul 3 2006 |
| Event | 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States Duration: May 7 2006 → May 12 2006 |
Other
| Other | 2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society |
|---|---|
| Country | United States |
| City | Denver, CO |
| Period | 5/7/06 → 5/12/06 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Recent progress of SiGe heterostructure technologies for novel devices. / Miyao, Masanobu; Kanno, Hiroshi; Sadoh, Taizoh.
Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing. Vol. 2 1. ed. 2006. p. 165-179.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Recent progress of SiGe heterostructure technologies for novel devices
AU - Miyao, Masanobu
AU - Kanno, Hiroshi
AU - Sadoh, Taizoh
PY - 2006/7/3
Y1 - 2006/7/3
N2 - The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.
AB - The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.
UR - http://www.scopus.com/inward/record.url?scp=33745460935&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33745460935&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33745460935
SN - 1566774381
SN - 9781566774383
VL - 2
SP - 165
EP - 179
BT - Dielectrics for Nanosystems II
ER -