Recent progress of SiGe heterostructure technologies for novel devices

Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The recent progress of SiGe hetrostructure technologies is reviewed by using the authors' results. Low temperature (<550°C) methods to achieve SiGe crystals on insulating films are developed by the combination of metal induced lateral crystallization and electric field application. In addition, epitaxial growth of ferromagnetic silicide on Si and Ge substrates becomes possible at 60-300°C. These results will be the key techniques to open new era of SiGe-based thin film transistors and spintronics devices. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems II
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages165-179
Number of pages15
Volume2
Edition1
Publication statusPublished - Jul 3 2006
Event2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: May 7 2006May 12 2006

Other

Other2nd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period5/7/065/12/06

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Miyao, M., Kanno, H., & Sadoh, T. (2006). Recent progress of SiGe heterostructure technologies for novel devices. In Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing (1 ed., Vol. 2, pp. 165-179)