Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser

Research output: Contribution to conferencePaper

Abstract

We review recent progress on organic light emitting devices. First, we mention an organic light emitting transistor which has lateral organic light-emitting diode structure that allowed field-effect transistor (FET) operation. This device configuration provides a novel organic light-emitting diode structure where the anode (source) and cathode (drain) electrodes are laterally arranged, providing us a chance to control EL intensity by changing the gate bias. We demonstrated that TPPy provides compatible transistor and EL characteristics. Further, we discuss on prospect on organic laser diodes. In particular, 4,4'-bis[(N-carbazole)styryl] biphenyl (BSB-Cz) demonstrated an extremely low ASE threshold of Eth=0.32±0.05μJ/cm 2, which is the lowest threshold ever reported. We observed that the 6-wt%-BSB-Cz:CBP film has an ultimate photoluminescence quantum efficiency of φpL=100% and a short transient lifetime of τf=1. 0±0.1ns, leading to a large radiative decay rate of kr= 1×109 s-1. We also discuss on possibility of the CW lasing.

Original languageEnglish
Pages4443-4445
Number of pages3
Publication statusPublished - Dec 1 2005
Externally publishedYes
Event54th SPSJ Symposium on Macromolecules - Yamagata, Japan
Duration: Sep 20 2005Sep 22 2005

Other

Other54th SPSJ Symposium on Macromolecules
CountryJapan
CityYamagata
Period9/20/059/22/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Adachi, C. (2005). Recent progress on organic light emitting devices -OLED, Organic light emitting transistor and organic semiconductor laser. 4443-4445. Paper presented at 54th SPSJ Symposium on Macromolecules, Yamagata, Japan.