Recombination dynamics in low-dimensional nitride semiconductors

Y. Kawakami, A. Kaneta, K. Omae, A. Shikanai, K. Okamoto, G. Marutsuki, Y. Narukawa, T. Mukai, Sg Fujita

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Abstract

Optical properties induced by two major effects, potential fluctuation and piezoelectric fields, have been assessed to interpret the emission mechanism in low-dimensional nitride semiconductors because the former leads to the exciton/carrier localization, and the latter to the quantum confined Stark effect (QCSE). Degenerated white-light pump-and-probe spectroscopy has been employed to assess which factor plays an important role in the series of In xGa1-xN multiple quantum well (MQW) structures whose well widths are 3 nm, 5 nm and 10 nm. Moreover, photoluminescence (PL) mapping with scanning near-field optical microscopy (SNOM) has revealed the dense distribution of island-like structures, the size of which ranges from 20 nm to 70 nm in a 3 nm-thick InxGa1-xN single quantum well (SQW) structure emitting at blue spectral region.

Original languageEnglish
Pages (from-to)337-343
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume240
Issue number2
DOIs
Publication statusPublished - Nov 1 2003

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kawakami, Y., Kaneta, A., Omae, K., Shikanai, A., Okamoto, K., Marutsuki, G., ... Fujita, S. (2003). Recombination dynamics in low-dimensional nitride semiconductors. Physica Status Solidi (B) Basic Research, 240(2), 337-343. https://doi.org/10.1002/pssb.200303427