Abstract
The optical properties of an undoped and a P-doped ZnO nanostructures have been studied by means of photoluminescence (PL), time-resolved PL, and spatially-resolved cathodoluminescence (CL) spectroscopy. The luminescence bands due to the radiative recombination of biexcitons and the exciton-exciton scattering process were observed. The binding energy of excitons and biexcitons was estimated to be 60 and 15 meV, respectively. Radiative and nonradiative recombination lifetimes of free excitons were estimated from temperature dependence of the PL lifetime and the time-integrated PL intensity. Although the radiative recombination lifetime for each sample was almost equal, the nonradiative recombination lifetime for the P-doped sample was longer than that for the undoped sample. This result suggested that the thermal activation of nonradiative recombination process was suppressed by the P doping. CL images revealed that the intensity of the side surface was much stronger than that of the interior in the P-doped sample. This result indicated that the P impurities were distributed around the surface of the nanostructures.
| Original language | English |
|---|---|
| Title of host publication | TENCON 2010 - 2010 IEEE Region 10 Conference |
| Pages | 1011-1014 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2010 |
| Event | 2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan Duration: Nov 21 2010 → Nov 24 2010 |
Other
| Other | 2010 IEEE Region 10 Conference, TENCON 2010 |
|---|---|
| Country | Japan |
| City | Fukuoka |
| Period | 11/21/10 → 11/24/10 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Computer Science Applications
Cite this
Recombination dynamics of excitons in phosphorus-doped ZnO nanostructures. / Murotani, Hideaki; Akase, Daiki; Yamada, Yoichi; Matsumoto, Takafumi; Nakamura, Daisuke; Okada, Tatsuo.
TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 1011-1014 5686455.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Recombination dynamics of excitons in phosphorus-doped ZnO nanostructures
AU - Murotani, Hideaki
AU - Akase, Daiki
AU - Yamada, Yoichi
AU - Matsumoto, Takafumi
AU - Nakamura, Daisuke
AU - Okada, Tatsuo
PY - 2010
Y1 - 2010
N2 - The optical properties of an undoped and a P-doped ZnO nanostructures have been studied by means of photoluminescence (PL), time-resolved PL, and spatially-resolved cathodoluminescence (CL) spectroscopy. The luminescence bands due to the radiative recombination of biexcitons and the exciton-exciton scattering process were observed. The binding energy of excitons and biexcitons was estimated to be 60 and 15 meV, respectively. Radiative and nonradiative recombination lifetimes of free excitons were estimated from temperature dependence of the PL lifetime and the time-integrated PL intensity. Although the radiative recombination lifetime for each sample was almost equal, the nonradiative recombination lifetime for the P-doped sample was longer than that for the undoped sample. This result suggested that the thermal activation of nonradiative recombination process was suppressed by the P doping. CL images revealed that the intensity of the side surface was much stronger than that of the interior in the P-doped sample. This result indicated that the P impurities were distributed around the surface of the nanostructures.
AB - The optical properties of an undoped and a P-doped ZnO nanostructures have been studied by means of photoluminescence (PL), time-resolved PL, and spatially-resolved cathodoluminescence (CL) spectroscopy. The luminescence bands due to the radiative recombination of biexcitons and the exciton-exciton scattering process were observed. The binding energy of excitons and biexcitons was estimated to be 60 and 15 meV, respectively. Radiative and nonradiative recombination lifetimes of free excitons were estimated from temperature dependence of the PL lifetime and the time-integrated PL intensity. Although the radiative recombination lifetime for each sample was almost equal, the nonradiative recombination lifetime for the P-doped sample was longer than that for the undoped sample. This result suggested that the thermal activation of nonradiative recombination process was suppressed by the P doping. CL images revealed that the intensity of the side surface was much stronger than that of the interior in the P-doped sample. This result indicated that the P impurities were distributed around the surface of the nanostructures.
UR - http://www.scopus.com/inward/record.url?scp=79951658750&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951658750&partnerID=8YFLogxK
U2 - 10.1109/TENCON.2010.5686455
DO - 10.1109/TENCON.2010.5686455
M3 - Conference contribution
AN - SCOPUS:79951658750
SN - 9781424468904
SP - 1011
EP - 1014
BT - TENCON 2010 - 2010 IEEE Region 10 Conference
ER -