Recombination mechanism in low-dimensional nitride semiconductors

Yoichi Kawakami, Akio Kaneta, Koichi Okamoto, Tsutomu Inoue, Fuminori Satou, Yoshihito Narita, Fritz Henneberger, Giichi Marutsuki, Yukio Narukawa, Takashi Mukai, Shigeo Fujita

Research output: Contribution to journalConference article

Abstract

Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogenic temperatures. The near-field PL images taken at an InxGa1-xN single-quantum-well (SQW) structure revealed the variation of both intensity and peak energy according to the probing location with the scale less than a few tens of a nanometer. The PL, the linewidth of which was about 60meV in macroscopic measurements, was separated into several peaks with the linewidth of about 12 meV if the SNOM-PL was taken with the aperture size of 30 nm. Clear spatial correlation was observed between PL intensity and PL peak-photon-energy, where the regions of strong PL intensity correspond to those of low PL peak-photon-energy. Time-resolved SNOM-PL study showed the important role of exciton/carrier localization in the recombination mechanism in InxGa 1-xN-based quantum structures.

Original languageEnglish
Pages (from-to)575-588
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4986
DOIs
Publication statusPublished - Nov 27 2003
EventPROCEEDINGS OF SPIE SPIE - The International Society for Optical Engineering: Physics and Simulation of Optoelectronic Devices XI - San Jose, CA, United States
Duration: Jan 27 2003Jan 31 2003

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Nitrides
Photoluminescence
Recombination
nitrides
Semiconductors
Semiconductor materials
photoluminescence
Near-field
Near field scanning optical microscopy
near fields
Microscopy
Scanning
Linewidth
microscopy
scanning
Photon
Photons
Energy
Exciton
photons

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Kawakami, Y., Kaneta, A., Okamoto, K., Inoue, T., Satou, F., Narita, Y., ... Fujita, S. (2003). Recombination mechanism in low-dimensional nitride semiconductors. Proceedings of SPIE - The International Society for Optical Engineering, 4986, 575-588. https://doi.org/10.1117/12.480854

Recombination mechanism in low-dimensional nitride semiconductors. / Kawakami, Yoichi; Kaneta, Akio; Okamoto, Koichi; Inoue, Tsutomu; Satou, Fuminori; Narita, Yoshihito; Henneberger, Fritz; Marutsuki, Giichi; Narukawa, Yukio; Mukai, Takashi; Fujita, Shigeo.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4986, 27.11.2003, p. 575-588.

Research output: Contribution to journalConference article

Kawakami, Y, Kaneta, A, Okamoto, K, Inoue, T, Satou, F, Narita, Y, Henneberger, F, Marutsuki, G, Narukawa, Y, Mukai, T & Fujita, S 2003, 'Recombination mechanism in low-dimensional nitride semiconductors', Proceedings of SPIE - The International Society for Optical Engineering, vol. 4986, pp. 575-588. https://doi.org/10.1117/12.480854
Kawakami, Yoichi ; Kaneta, Akio ; Okamoto, Koichi ; Inoue, Tsutomu ; Satou, Fuminori ; Narita, Yoshihito ; Henneberger, Fritz ; Marutsuki, Giichi ; Narukawa, Yukio ; Mukai, Takashi ; Fujita, Shigeo. / Recombination mechanism in low-dimensional nitride semiconductors. In: Proceedings of SPIE - The International Society for Optical Engineering. 2003 ; Vol. 4986. pp. 575-588.
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