Reconsideration of metal work function at metal/semiconductor interface

Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Fermi-level pinning (FLP) at metal/semiconductor interface, which is deviated from ideal Schottky-Mott limit, has been discussed for several decades based on various intrinsic and extrinsic models, and it has commonly been considered that the origin of FLP is ascribed only to semiconductor side. In this paper, we discuss FLP from the viewpoint of work function of met al. We focus on a fact that both of surface term of vacuum work function at metal/vacuum interface and intrinsic metal induced gap states (MIGS) at metal/semiconductor interface are described as a common physics of wave function tailing from met al. This suggests that the MIGS is regarded as a surface term of work function of metal at metal/semiconductor interface rather than interface states. Namely, the FLP caused by MIGS seems corresponded to modulation of work function. We also discuss how to control the work function modulation from both semiconductor and metal sides taking germanium as an example.

Original languageEnglish
Title of host publicationECS Transactions
EditorsK. Shiojima, A. Mai, J. Murota, P. Chin, C. L. Claeys, H. Iwai, S. Deleonibus, M. Tao
PublisherElectrochemical Society Inc.
Pages107-112
Number of pages6
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2017
Externally publishedYes
Event10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

NameECS Transactions
Number4
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other10th Symposium on Semiconductor Process Integration - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period10/1/1710/5/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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