Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

Masaki Goto, Ryo Amano, Naotaka Shimoda, Yoshimine Kato, Kungen Teii

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Highly rectifying heterojunctions of n-type nanocrystalline diamond (NCD) films to p-type 4H-SiC substrates are fabricated to develop p-n junction diodes operable at high temperatures. In reverse bias condition, a potential barrier for holes at the interface prevents the injection of reverse leakage current from the NCD into the SiC and achieves the high rectification ratios of the order of 107 at room temperature and 104 even at 570 K. The mechanism of the forward current injection is described with the upward shift of the defect energy levels in the NCD to the conduction band of the SiC by forward biasing. The forward current shows different behavior from typical SiC Schottky diodes at high temperatures.

Original languageEnglish
Article number153113
JournalApplied Physics Letters
Volume104
Issue number15
DOIs
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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