Rectification properties of nanocrystalline diamond/silicon p-n heterojunction diodes

Kungen Tsutsui, Tomohiro Ikeda

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Carrier transport mechanism in n-type nanocrystalline diamond (NCD)/p-type Si heterojunction diodes prepared by microwave plasma-enhanced chemical vapor deposition is studied in a temperature range of room temperature to 473 K. Current-voltage measurements show at most three orders of magnitude of rectification at ±20 V of biasing and room temperature, depending upon the deposition temperature. The current-voltage characteristics are described with the high ideality factor and the low current injection barrier due to the disordered NCD/Si heterojunction interface, mainly associated with grain boundaries in the NCD film. The Arrhenius plots of the currents reveal that the thermal excitation of carriers limits the conduction, and the apparent activation energy decreases drastically upon the bias voltage change from reverse to forward. The current injection mechanism at the interface is explained along the predicted energy-band diagrams, such that the major carriers from the defect states of the NCD are injected into the conduction band of the Si by forward biasing.

Original languageEnglish
Article number093705
JournalJournal of Applied Physics
Volume114
Issue number9
DOIs
Publication statusPublished - Sep 7 2013

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rectification
heterojunctions
diamonds
diodes
silicon
injection
electric potential
room temperature
low currents
diamond films
electrical measurement
energy bands
temperature
conduction bands
grain boundaries
plots
diagrams
vapor deposition
activation energy
microwaves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Rectification properties of nanocrystalline diamond/silicon p-n heterojunction diodes. / Tsutsui, Kungen; Ikeda, Tomohiro.

In: Journal of Applied Physics, Vol. 114, No. 9, 093705, 07.09.2013.

Research output: Contribution to journalArticle

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