Reduced amplified spontaneous emission threshold in organic semiconductor laser structure with relaxed roll-off characteristics under high current densities

Munetomo Inoue, Kenichi Goushi, Kuniaki Endo, Hiroko Nomura, Chihaya Adachi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We reduced the amplified spontaneous emission (ASE) threshold in an organic semiconductor laser structure by the introduction of an exciton blocking layer adjacent to the cathode layer. A phenyl-dipyrenylphosphine oxide (POPy 2) layer with the function of an electron transport layer and the exciton blocking layer were inserted between an active layer of 4,4-bis[N-(carbazole)styrylbiphenyl] (BSB-Cz) and a metal cathode layer. The electron injection barrier from POPy2 to BSB-Cz is downward, indicating no net energy barrier, and the hole injection barrier from the BSB-Cz layer into the POPy2 layer is also small because of the similarity between the highest occupied molecular orbital levels of the materials. Therefore, the proposed device structure can avoid extra carrier accumulations at the heterointerface, leading to compatibility in terms of both relaxation of the exciton-polaron annihilation and blocking of the energy transfer from the BSB-Cz layer into the cathode layer.

Original languageEnglish
Pages (from-to)754-758
Number of pages5
JournalJournal of Luminescence
Volume143
DOIs
Publication statusPublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Reduced amplified spontaneous emission threshold in organic semiconductor laser structure with relaxed roll-off characteristics under high current densities'. Together they form a unique fingerprint.

  • Cite this