TY - JOUR
T1 - Reduced graphene oxide-transition metal hybrids as p-type semiconductors for acetaldehyde sensing
AU - Murashima, Yusuke
AU - Karim, Mohammad Razaul
AU - Furue, Ryo
AU - Matsui, Takeshi
AU - Takehira, Hiroshi
AU - Wakata, Kosuke
AU - Toda, Kei
AU - Ohtani, Ryo
AU - Nakamura, Masaaki
AU - Hayami, Shinya
N1 - Publisher Copyright:
© 2016 the Partner Organisations.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2016/6
Y1 - 2016/6
N2 - Acetaldehyde gas sensing using hybrids of reduced graphene oxide (rGO) and transition metal elements, rGO-M (M = oxide/hydroxide of Mn, Fe, Co and Ni) has been investigated. Thin films of GO, rGO and rGO-M on conductive glass were deposited through simple and affordable techniques and characterized using Raman spectroscopy, powder X-ray diffraction patterns, field emission scanning electron microscopy and electrical conductivity measurements. Concentration dependent resistances during the oxidation of acetaldehyde gas in air (10 to 50%) were investigated by using a sensing probe devised from rGO, GO-M and the rGO-M hybrids, of which rGO-Ni exhibited the maximum sensitivity. In rGO-Ni, in combination with rGO the NiOOH precursor can capture electrons (generated from acetaldehyde oxidation) through the holes, while indicating rGO-Ni to be a p-type semiconductor. This report implies the possibility of developing inexpensive graphene based p-type semiconductors for sensing other gases as well.
AB - Acetaldehyde gas sensing using hybrids of reduced graphene oxide (rGO) and transition metal elements, rGO-M (M = oxide/hydroxide of Mn, Fe, Co and Ni) has been investigated. Thin films of GO, rGO and rGO-M on conductive glass were deposited through simple and affordable techniques and characterized using Raman spectroscopy, powder X-ray diffraction patterns, field emission scanning electron microscopy and electrical conductivity measurements. Concentration dependent resistances during the oxidation of acetaldehyde gas in air (10 to 50%) were investigated by using a sensing probe devised from rGO, GO-M and the rGO-M hybrids, of which rGO-Ni exhibited the maximum sensitivity. In rGO-Ni, in combination with rGO the NiOOH precursor can capture electrons (generated from acetaldehyde oxidation) through the holes, while indicating rGO-Ni to be a p-type semiconductor. This report implies the possibility of developing inexpensive graphene based p-type semiconductors for sensing other gases as well.
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U2 - 10.1039/c6qi00058d
DO - 10.1039/c6qi00058d
M3 - Article
AN - SCOPUS:84974660123
SN - 2052-1545
VL - 3
SP - 842
EP - 848
JO - Inorganic Chemistry Frontiers
JF - Inorganic Chemistry Frontiers
IS - 6
ER -