Abstract
The generation of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace was analyzed numerically. The crystal-melt interface is tracked by an enthalpy method. Numerical results show that some polycrystalline silicon grains generates along the crucible wall and marches into the interior of crystal. The ratio of polycrystalline silicon grains in a global crystal is mainly determined by a ratio of thermal flux along the crucible wall to thermal flux along the seed. By reducing the thermal flux along the crucible wall or by increasing the thermal flux along the seed, the ratio of polycrystalline silicon grains in a global crystal can be markedly reduced.
| Original language | English |
|---|---|
| Pages (from-to) | 47-52 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 352 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Aug 1 2012 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace. / Gao, B.; Nakano, S.; Harada, H.; Miyamura, Y.; Sekiguchi, T.; Kakimoto, K.
In: Journal of Crystal Growth, Vol. 352, No. 1, 01.08.2012, p. 47-52.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace
AU - Gao, B.
AU - Nakano, S.
AU - Harada, H.
AU - Miyamura, Y.
AU - Sekiguchi, T.
AU - Kakimoto, K.
PY - 2012/8/1
Y1 - 2012/8/1
N2 - The generation of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace was analyzed numerically. The crystal-melt interface is tracked by an enthalpy method. Numerical results show that some polycrystalline silicon grains generates along the crucible wall and marches into the interior of crystal. The ratio of polycrystalline silicon grains in a global crystal is mainly determined by a ratio of thermal flux along the crucible wall to thermal flux along the seed. By reducing the thermal flux along the crucible wall or by increasing the thermal flux along the seed, the ratio of polycrystalline silicon grains in a global crystal can be markedly reduced.
AB - The generation of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace was analyzed numerically. The crystal-melt interface is tracked by an enthalpy method. Numerical results show that some polycrystalline silicon grains generates along the crucible wall and marches into the interior of crystal. The ratio of polycrystalline silicon grains in a global crystal is mainly determined by a ratio of thermal flux along the crucible wall to thermal flux along the seed. By reducing the thermal flux along the crucible wall or by increasing the thermal flux along the seed, the ratio of polycrystalline silicon grains in a global crystal can be markedly reduced.
UR - http://www.scopus.com/inward/record.url?scp=84863319334&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863319334&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2011.11.084
DO - 10.1016/j.jcrysgro.2011.11.084
M3 - Article
AN - SCOPUS:84863319334
VL - 352
SP - 47
EP - 52
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -