A new silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure, which employs the Schottky contacts at the source/drain, is proposed to suppress the floating-body effect. Using a Schottky contact, excess holes in the channel region are smoothly absorbed into the source and the impact ionization near the drain is reduced due to the built-in field. Analysis with two-dimensional simulation verifies these effects. As a result, the early drain breakdown of the SOI MOSFET is suppressed. A test device fabricated using Er silicide self-aligned technology proves the technical feasibility of the proposed device.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||3 SUPPL. B|
|Publication status||Published - Mar 1998|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)