Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts

Mika Nishisaka, Tanemasa Asano

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

A new silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure, which employs the Schottky contacts at the source/drain, is proposed to suppress the floating-body effect. Using a Schottky contact, excess holes in the channel region are smoothly absorbed into the source and the impact ionization near the drain is reduced due to the built-in field. Analysis with two-dimensional simulation verifies these effects. As a result, the early drain breakdown of the SOI MOSFET is suppressed. A test device fabricated using Er silicide self-aligned technology proves the technical feasibility of the proposed device.

Original languageEnglish
Pages (from-to)1295-1299
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number3 SUPPL. B
Publication statusPublished - Mar 1 1998

Fingerprint

SOI (semiconductors)
MOSFET devices
metal oxide semiconductors
floating
electric contacts
field effect transistors
insulators
Silicon
Impact ionization
silicon
breakdown
ionization
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts. / Nishisaka, Mika; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 37, No. 3 SUPPL. B, 01.03.1998, p. 1295-1299.

Research output: Contribution to journalArticle

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