Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts

Mika Nishisaka, Tanemasa Asano

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

A new silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure, which employs the Schottky contacts at the source/drain, is proposed to suppress the floating-body effect. Using a Schottky contact, excess holes in the channel region are smoothly absorbed into the source and the impact ionization near the drain is reduced due to the built-in field. Analysis with two-dimensional simulation verifies these effects. As a result, the early drain breakdown of the SOI MOSFET is suppressed. A test device fabricated using Er silicide self-aligned technology proves the technical feasibility of the proposed device.

Original languageEnglish
Pages (from-to)1295-1299
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume37
Issue number3 SUPPL. B
Publication statusPublished - Mar 1998
Externally publishedYes

Fingerprint

SOI (semiconductors)
MOSFET devices
metal oxide semiconductors
floating
electric contacts
field effect transistors
insulators
Silicon
Impact ionization
silicon
breakdown
ionization
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts. / Nishisaka, Mika; Asano, Tanemasa.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 37, No. 3 SUPPL. B, 03.1998, p. 1295-1299.

Research output: Contribution to journalArticle

@article{62d170a5b09e4b8eb4b0240fc45c7e2c,
title = "Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts",
abstract = "A new silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure, which employs the Schottky contacts at the source/drain, is proposed to suppress the floating-body effect. Using a Schottky contact, excess holes in the channel region are smoothly absorbed into the source and the impact ionization near the drain is reduced due to the built-in field. Analysis with two-dimensional simulation verifies these effects. As a result, the early drain breakdown of the SOI MOSFET is suppressed. A test device fabricated using Er silicide self-aligned technology proves the technical feasibility of the proposed device.",
author = "Mika Nishisaka and Tanemasa Asano",
year = "1998",
month = "3",
language = "English",
volume = "37",
pages = "1295--1299",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "3 SUPPL. B",

}

TY - JOUR

T1 - Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts

AU - Nishisaka, Mika

AU - Asano, Tanemasa

PY - 1998/3

Y1 - 1998/3

N2 - A new silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure, which employs the Schottky contacts at the source/drain, is proposed to suppress the floating-body effect. Using a Schottky contact, excess holes in the channel region are smoothly absorbed into the source and the impact ionization near the drain is reduced due to the built-in field. Analysis with two-dimensional simulation verifies these effects. As a result, the early drain breakdown of the SOI MOSFET is suppressed. A test device fabricated using Er silicide self-aligned technology proves the technical feasibility of the proposed device.

AB - A new silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure, which employs the Schottky contacts at the source/drain, is proposed to suppress the floating-body effect. Using a Schottky contact, excess holes in the channel region are smoothly absorbed into the source and the impact ionization near the drain is reduced due to the built-in field. Analysis with two-dimensional simulation verifies these effects. As a result, the early drain breakdown of the SOI MOSFET is suppressed. A test device fabricated using Er silicide self-aligned technology proves the technical feasibility of the proposed device.

UR - http://www.scopus.com/inward/record.url?scp=0000754750&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000754750&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000754750

VL - 37

SP - 1295

EP - 1299

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3 SUPPL. B

ER -