Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface

Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The element metal/germanium (Ge) interface exhibits a strong Fermi level pinning (FLP), which is usually characterized on the basis of Ge side semiconductor properties. In this work, we demonstrate that metal properties significantly affect the Schottky barrier height (SBH) on Ge. Metallic germanides show both FLP alleviation and a clear substrate orientation dependence of SBH on Ge, despite the nearly perfect FLP and very slight orientation dependence in the element metal case. As a result, ohmic characteristics are observed at germanide/n-Ge (111) junctions. The metal properties required to alleviate the FLP on Ge are also discussed.

Original languageEnglish
Article number081201
JournalApplied Physics Express
Volume9
Issue number8
DOIs
Publication statusPublished - Aug 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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