TY - JOUR
T1 - Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface
AU - Nishimura, Tomonori
AU - Yajima, Takeaki
AU - Toriumi, Akira
N1 - Publisher Copyright:
© 2016 The Japan Society of Applied Physics.
PY - 2016/8
Y1 - 2016/8
N2 - The element metal/germanium (Ge) interface exhibits a strong Fermi level pinning (FLP), which is usually characterized on the basis of Ge side semiconductor properties. In this work, we demonstrate that metal properties significantly affect the Schottky barrier height (SBH) on Ge. Metallic germanides show both FLP alleviation and a clear substrate orientation dependence of SBH on Ge, despite the nearly perfect FLP and very slight orientation dependence in the element metal case. As a result, ohmic characteristics are observed at germanide/n-Ge (111) junctions. The metal properties required to alleviate the FLP on Ge are also discussed.
AB - The element metal/germanium (Ge) interface exhibits a strong Fermi level pinning (FLP), which is usually characterized on the basis of Ge side semiconductor properties. In this work, we demonstrate that metal properties significantly affect the Schottky barrier height (SBH) on Ge. Metallic germanides show both FLP alleviation and a clear substrate orientation dependence of SBH on Ge, despite the nearly perfect FLP and very slight orientation dependence in the element metal case. As a result, ohmic characteristics are observed at germanide/n-Ge (111) junctions. The metal properties required to alleviate the FLP on Ge are also discussed.
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U2 - 10.7567/APEX.9.081201
DO - 10.7567/APEX.9.081201
M3 - Article
AN - SCOPUS:84981328153
VL - 9
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 8
M1 - 081201
ER -