Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer

H. Yamaguchi, Shinichi Nishizawa, W. Bahng, K. Fukuda, S. Yoshida, K. Arai, Y. Takano

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Defects in commercially available silicon carbide (SiC) wafers have been investigated by X-ray topography and optical microscopy. Dots appearing in transmission topographs are identified as a screw dislocation running through the [0001] direction by a comparative observation of the reflection topographs from the front and rear sides. In the peripheral region, these dots appear with high density and accompany large strain fields at the edge, which are related with the dislocations in the basal plane emanating from the dots and connecting them and large holes with diameters of about 10-20 μm opening at the epilayer surface. These large strain fields are considered to originate from the large Burgers vector associating with the screw dislocations.

Original languageEnglish
Pages (from-to)221-224
Number of pages4
JournalMaterials Science and Engineering B
Volume61-62
DOIs
Publication statusPublished - Jul 30 1999
Externally publishedYes

Fingerprint

Screw dislocations
Wave transmission
screw dislocations
Silicon carbide
silicon carbides
wafers
X rays
Burgers vector
Crystals
Epilayers
Topography
crystals
Optical microscopy
topography
x rays
microscopy
Defects
defects
silicon carbide
Direction compound

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer. / Yamaguchi, H.; Nishizawa, Shinichi; Bahng, W.; Fukuda, K.; Yoshida, S.; Arai, K.; Takano, Y.

In: Materials Science and Engineering B, Vol. 61-62, 30.07.1999, p. 221-224.

Research output: Contribution to journalArticle

Yamaguchi, H. ; Nishizawa, Shinichi ; Bahng, W. ; Fukuda, K. ; Yoshida, S. ; Arai, K. ; Takano, Y. / Reflection and transmission X-ray topographic study of a SiC crystal and epitaxial wafer. In: Materials Science and Engineering B. 1999 ; Vol. 61-62. pp. 221-224.
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