Refractive index change in Al+-ion-implanted silica glass

Kohei Fukumi; Akiyoshi Chayahara; Naoyuki Kitamura; Junji Nishii; Kohei Kadono; Masaki Makihara; Kanenaga Fujii; Junji Hayakawa

doi:10.1063/1.360894

Refractive index change in Al⁺-ion-implanted silica glass

Kohei Fukumi, Akiyoshi Chayahara, Naoyuki Kitamura, Junji Nishii, Kohei Kadono, Masaki Makihara, Kanenaga Fujii, Junji Hayakawa

Research Center for Hydrogen Industrial Use and Storage

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Al⁺ ions have been implanted in silica glass at an acceleration energy of 200 eV and doses ranging from 1×10 ¹³ to 1×10 ¹⁷ ions cm ^-2. Infrared reflection spectra and ultraviolet, visible, and near-infrared absorption spectra have been measured. It was found that refractive index of silica glass increased by 6%-10% after implantation of 1×10 ¹⁷ Al ⁺ ions cm ^-2. It was deduced that this refractive index change is caused by the formation of Si-Si homobonds. but not by the decrease in Si-O-Si bond angle which leads to compaction.

Original language	English
Pages (from-to)	1060-1064
Number of pages	5
Journal	Journal of Applied Physics
Volume	79
Issue number	2
DOIs	https://doi.org/10.1063/1.360894
Publication status	Published - Jan 15 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.360894

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title = "Refractive index change in Al+-ion-implanted silica glass",

abstract = "Al+ ions have been implanted in silica glass at an acceleration energy of 200 eV and doses ranging from 1×10 13 to 1×10 17 ions cm -2. Infrared reflection spectra and ultraviolet, visible, and near-infrared absorption spectra have been measured. It was found that refractive index of silica glass increased by 6%-10% after implantation of 1×10 17 Al + ions cm -2. It was deduced that this refractive index change is caused by the formation of Si-Si homobonds. but not by the decrease in Si-O-Si bond angle which leads to compaction.",

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T1 - Refractive index change in Al+-ion-implanted silica glass

AU - Fukumi, Kohei

AU - Chayahara, Akiyoshi

AU - Kitamura, Naoyuki

AU - Nishii, Junji

AU - Kadono, Kohei

AU - Makihara, Masaki

AU - Fujii, Kanenaga

AU - Hayakawa, Junji

PY - 1996/1/15

Y1 - 1996/1/15

N2 - Al+ ions have been implanted in silica glass at an acceleration energy of 200 eV and doses ranging from 1×10 13 to 1×10 17 ions cm -2. Infrared reflection spectra and ultraviolet, visible, and near-infrared absorption spectra have been measured. It was found that refractive index of silica glass increased by 6%-10% after implantation of 1×10 17 Al + ions cm -2. It was deduced that this refractive index change is caused by the formation of Si-Si homobonds. but not by the decrease in Si-O-Si bond angle which leads to compaction.

AB - Al+ ions have been implanted in silica glass at an acceleration energy of 200 eV and doses ranging from 1×10 13 to 1×10 17 ions cm -2. Infrared reflection spectra and ultraviolet, visible, and near-infrared absorption spectra have been measured. It was found that refractive index of silica glass increased by 6%-10% after implantation of 1×10 17 Al + ions cm -2. It was deduced that this refractive index change is caused by the formation of Si-Si homobonds. but not by the decrease in Si-O-Si bond angle which leads to compaction.

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Refractive index change in Al⁺-ion-implanted silica glass

Abstract

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