Refractive index change in Al+-ion-implanted silica glass

Kohei Fukumi, Akiyoshi Chayahara, Naoyuki Kitamura, Junji Nishii, Kohei Kadono, Masaki Makihara, Kanenaga Fujii, Junji Hayakawa

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Al+ ions have been implanted in silica glass at an acceleration energy of 200 eV and doses ranging from 1×10 13 to 1×10 17 ions cm -2. Infrared reflection spectra and ultraviolet, visible, and near-infrared absorption spectra have been measured. It was found that refractive index of silica glass increased by 6%-10% after implantation of 1×10 17 Al + ions cm -2. It was deduced that this refractive index change is caused by the formation of Si-Si homobonds. but not by the decrease in Si-O-Si bond angle which leads to compaction.

Original languageEnglish
Pages (from-to)1060-1064
Number of pages5
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - Jan 15 1996

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Fukumi, K., Chayahara, A., Kitamura, N., Nishii, J., Kadono, K., Makihara, M., Fujii, K., & Hayakawa, J. (1996). Refractive index change in Al+-ion-implanted silica glass. Journal of Applied Physics, 79(2), 1060-1064.