Relation between UIS withstanding capability and gate leakage currents for high voltage GaN-HEMTs

Toshiyuki Naka, Wataru Saito

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

This paper reports that the unclamped inductive switching (UIS) withstanding capability of high voltage GaN-HEMTs depends on the gate leakage current. The relation between the UIS withstanding capability and the gate leakage current is discussed by the results of the UIS test for GaN-HEMTs with a p-type gate structure. Conclusively, the relation between the UIS withstanding capability and the crystal defect density around the gate for the GaN-HEMT was clarified.

Original languageEnglish
Article number7988922
Pages (from-to)199-202
Number of pages4
JournalProceedings of the International Symposium on Power Semiconductor Devices and ICs
DOIs
Publication statusPublished - Jan 1 2017
Externally publishedYes
Event29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017 - Sapporo, Japan
Duration: May 28 2017Jun 1 2017

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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