Abstract
A lack of unclamped inductive switching (UIS) withstanding capability of high-voltage GaN-HEMTs is a critical disadvantage for them. It is caused by poor removability of holes, which are generated by the avalanche breakdown. This paper shows the relations between the UIS withstanding capability and the static I-V characteristics are discussed to clarify the bottle neck factor for hole removal. From the UIS withstanding capability depending on the gate-leakage current, the crystal defect density around the gate would influence the withstanding capability.
| Original language | English |
|---|---|
| Pages (from-to) | 309-313 |
| Number of pages | 5 |
| Journal | Microelectronics Reliability |
| Volume | 76-77 |
| DOIs | |
| Publication status | Published - Sept 2017 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Safety, Risk, Reliability and Quality
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering