Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Y. Miyamura, H. Harada, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 1017 atoms/cm3, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalJournal of Crystal Growth
Volume486
DOIs
Publication statusPublished - Mar 15 2018

Fingerprint

Carrier lifetime
carrier lifetime
Silicon
Carbon
life (durability)
Crystals
carbon
crystals
Oxygen
silicon
Crystal growth from melt
Eddy currents
Czochralski method
Fourier transform infrared spectroscopy
oxygen
eddy currents
Doping (additives)
Single crystals
Atoms
infrared spectroscopy

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Relationship between carbon concentration and carrier lifetime in CZ-Si crystals. / Miyamura, Y.; Harada, H.; Nakano, S.; Nishizawa, Shinichi; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 486, 15.03.2018, p. 56-59.

Research output: Contribution to journalArticle

@article{668dc771b01d4c9fa59e4ceb5a38e053,
title = "Relationship between carbon concentration and carrier lifetime in CZ-Si crystals",
abstract = "This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 1017 atoms/cm3, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.",
author = "Y. Miyamura and H. Harada and S. Nakano and Shinichi Nishizawa and Koichi Kakimoto",
year = "2018",
month = "3",
day = "15",
doi = "10.1016/j.jcrysgro.2018.01.020",
language = "English",
volume = "486",
pages = "56--59",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

AU - Miyamura, Y.

AU - Harada, H.

AU - Nakano, S.

AU - Nishizawa, Shinichi

AU - Kakimoto, Koichi

PY - 2018/3/15

Y1 - 2018/3/15

N2 - This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 1017 atoms/cm3, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.

AB - This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 1017 atoms/cm3, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.

UR - http://www.scopus.com/inward/record.url?scp=85041483544&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041483544&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2018.01.020

DO - 10.1016/j.jcrysgro.2018.01.020

M3 - Article

AN - SCOPUS:85041483544

VL - 486

SP - 56

EP - 59

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -