Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Y. Miyamura, H. Harada, S. Nakano, S. Nishizawa, K. Kakimoto

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5 Citations (Scopus)

Abstract

This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 1017 atoms/cm3, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalJournal of Crystal Growth
Volume486
DOIs
Publication statusPublished - Mar 15 2018
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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