TY - JOUR
T1 - Relationship between carbon concentration and carrier lifetime in CZ-Si crystals
AU - Miyamura, Y.
AU - Harada, H.
AU - Nakano, S.
AU - Nishizawa, S.
AU - Kakimoto, Koichi
N1 - Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).
PY - 2018/3/15
Y1 - 2018/3/15
N2 - This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 1017 atoms/cm3, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.
AB - This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6–8 × 1017 atoms/cm3, and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration.
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U2 - 10.1016/j.jcrysgro.2018.01.020
DO - 10.1016/j.jcrysgro.2018.01.020
M3 - Article
AN - SCOPUS:85041483544
SN - 0022-0248
VL - 486
SP - 56
EP - 59
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -