TY - JOUR
T1 - Relationship between dislocation density and oxygen concentration in silicon crystals during directional solidification
AU - Ide, Tomoro
AU - Harada, Hirofumi
AU - Miyamura, Yoshiji
AU - Imai, Masato
AU - Nakano, Satoshi
AU - Kakimoto, Koichi
N1 - Funding Information:
Acknowledgments: This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry and Grant-in-Aid for Scientific Research (B) 16H03859 from the Japanese Ministry of Education, Science, Sports and Culture.
Funding Information:
This work was partly supported by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry and Grant-in-Aid for Scientific Research (B)16H03859 from the Japanese Ministry of Education, Science, Sports and Culture.
Publisher Copyright:
© 2018 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2018/6/7
Y1 - 2018/6/7
N2 - This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dislocation cores during crystal growth and annealing processes in a furnace. The results showed that the dislocation density mainly increased during cooling process, rather than crystal growth, when the effect of oxygen diffusion to dislocation cores was ignored. On the contrary, the dislocation density increased during both crystal growth and cooling processes when the effect of interstitial oxygen diffusion was considered. At a dislocation density larger than 1.0 × 105 cm–2, the interstitial oxygen concentration in bulk decreased due to the diffusion process, if interstitial oxygen atoms were between dislocations, whereas the concentration at dislocation cores increases.
AB - This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dislocation cores during crystal growth and annealing processes in a furnace. The results showed that the dislocation density mainly increased during cooling process, rather than crystal growth, when the effect of oxygen diffusion to dislocation cores was ignored. On the contrary, the dislocation density increased during both crystal growth and cooling processes when the effect of interstitial oxygen diffusion was considered. At a dislocation density larger than 1.0 × 105 cm–2, the interstitial oxygen concentration in bulk decreased due to the diffusion process, if interstitial oxygen atoms were between dislocations, whereas the concentration at dislocation cores increases.
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U2 - 10.3390/cryst8060244
DO - 10.3390/cryst8060244
M3 - Article
AN - SCOPUS:85048724135
SN - 2073-4352
VL - 8
JO - Crystals
JF - Crystals
IS - 6
M1 - 244
ER -