Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture

S. Nakano, B. Gao, K. Kakimoto

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The relationship between the oxygen impurity distribution in multicrystalline silicon and the use of top and/or side heaters in an unidirectional solidification process was investigated by numerical analysis. It was found that the oxygen concentration in the melt for the side heating system is lower than that for only the top heating system. This occurs because of the difference in flow direction of the melt near the crucible wall. The melt flows upward near the crucible wall when the side heating system is used. Oxygen is therefore dissolved from the silica crucible wall and is transported easily to the melt surface, where it evaporates.

Original languageEnglish
Pages (from-to)62-66
Number of pages5
JournalJournal of Crystal Growth
Volume375
DOIs
Publication statusPublished - May 20 2013

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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