Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in the [001] and [111] directions

Bing Gao, Koichi Kakimoto

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

To effectively control dislocations of monocrystalline-like silicon grown in the [001] and [111] directions, the relationship between the locations of activated dislocations and the cooling flux direction was studied numerically from the perspective of activation of slip systems. The cooling flux direction was shown to have a significant effect on the activation of slip systems. The radial flux and axial flux activate different slip systems at different locations in the crystal. The relationship between the flux direction and the activation of slip systems in the [001] and [111] growth directions has been revealed. The results provide theoretical support for reducing dislocations inside a crystal or in the part of the crystal where dislocations can cause the most damage, by intentionally controlling the flux direction during the crystal growth process.

Original languageEnglish
Pages (from-to)1771-1780
Number of pages10
JournalJournal of Applied Crystallography
Volume46
Issue number6
DOIs
Publication statusPublished - Dec 1 2013

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Silicon
Fluxes
Cooling
Chemical activation
Dislocations (crystals)
Crystals
Crystallization
Direction compound
Growth

All Science Journal Classification (ASJC) codes

  • Biochemistry, Genetics and Molecular Biology(all)

Cite this

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abstract = "To effectively control dislocations of monocrystalline-like silicon grown in the [001] and [111] directions, the relationship between the locations of activated dislocations and the cooling flux direction was studied numerically from the perspective of activation of slip systems. The cooling flux direction was shown to have a significant effect on the activation of slip systems. The radial flux and axial flux activate different slip systems at different locations in the crystal. The relationship between the flux direction and the activation of slip systems in the [001] and [111] growth directions has been revealed. The results provide theoretical support for reducing dislocations inside a crystal or in the part of the crystal where dislocations can cause the most damage, by intentionally controlling the flux direction during the crystal growth process.",
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AU - Gao, Bing

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N2 - To effectively control dislocations of monocrystalline-like silicon grown in the [001] and [111] directions, the relationship between the locations of activated dislocations and the cooling flux direction was studied numerically from the perspective of activation of slip systems. The cooling flux direction was shown to have a significant effect on the activation of slip systems. The radial flux and axial flux activate different slip systems at different locations in the crystal. The relationship between the flux direction and the activation of slip systems in the [001] and [111] growth directions has been revealed. The results provide theoretical support for reducing dislocations inside a crystal or in the part of the crystal where dislocations can cause the most damage, by intentionally controlling the flux direction during the crystal growth process.

AB - To effectively control dislocations of monocrystalline-like silicon grown in the [001] and [111] directions, the relationship between the locations of activated dislocations and the cooling flux direction was studied numerically from the perspective of activation of slip systems. The cooling flux direction was shown to have a significant effect on the activation of slip systems. The radial flux and axial flux activate different slip systems at different locations in the crystal. The relationship between the flux direction and the activation of slip systems in the [001] and [111] growth directions has been revealed. The results provide theoretical support for reducing dislocations inside a crystal or in the part of the crystal where dislocations can cause the most damage, by intentionally controlling the flux direction during the crystal growth process.

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