Abstract
Stress-relaxation phenomena in SiGe-on-insulator (SGOI) layers during the oxidation-induced Ge condensation process have been comprehensively investigated as a function of several parameters (SiGe thickness, Ge fraction, oxidation temperature, and oxidation time). Final SiGe thickness-dependent relaxation ratio was found, i.e., complete relaxation for thick (<100 nm) SGOI layers, and abrupt decrease in relaxation ratio with decreasing SiGe thickness below 100 nm, e.g., the relaxation ratio of 30% for the SiGe thickness of 30 nm. An improved method combined with H+ irradiation (5× 1015 cm -2) and postannealing (1200°C) has been examined to enhance the stress-relaxation. This achieved a high relaxation ratio (70%) and a low defect density (1× 106 cm-2) in the ultrathin (28 nm) SGOI with a Ge fraction of 30%. A local-area slipping model was proposed, where SiGe/ SiO2 interface slipping occurred during postannealing in local areas surrounded by cross hatches. This model quantitatively explained the enhanced relaxation ratio of the SGOI layers obtained by the Ge condensation method combined with H+ irradiation and postannealing.
| Original language | English |
|---|---|
| Pages (from-to) | H991-H996 |
| Journal | Journal of the Electrochemical Society |
| Volume | 157 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Oct 13 2010 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
Cite this
Relaxation mechanism of SiGe-on-insulator by oxidation-induced Ge condensation with H+ irradiation and postannealing. / Tanaka, Masanori; Sadoh, Taizoh; Miyao, Masanobu.
In: Journal of the Electrochemical Society, Vol. 157, No. 11, 13.10.2010, p. H991-H996.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Relaxation mechanism of SiGe-on-insulator by oxidation-induced Ge condensation with H+ irradiation and postannealing
AU - Tanaka, Masanori
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2010/10/13
Y1 - 2010/10/13
N2 - Stress-relaxation phenomena in SiGe-on-insulator (SGOI) layers during the oxidation-induced Ge condensation process have been comprehensively investigated as a function of several parameters (SiGe thickness, Ge fraction, oxidation temperature, and oxidation time). Final SiGe thickness-dependent relaxation ratio was found, i.e., complete relaxation for thick (<100 nm) SGOI layers, and abrupt decrease in relaxation ratio with decreasing SiGe thickness below 100 nm, e.g., the relaxation ratio of 30% for the SiGe thickness of 30 nm. An improved method combined with H+ irradiation (5× 1015 cm -2) and postannealing (1200°C) has been examined to enhance the stress-relaxation. This achieved a high relaxation ratio (70%) and a low defect density (1× 106 cm-2) in the ultrathin (28 nm) SGOI with a Ge fraction of 30%. A local-area slipping model was proposed, where SiGe/ SiO2 interface slipping occurred during postannealing in local areas surrounded by cross hatches. This model quantitatively explained the enhanced relaxation ratio of the SGOI layers obtained by the Ge condensation method combined with H+ irradiation and postannealing.
AB - Stress-relaxation phenomena in SiGe-on-insulator (SGOI) layers during the oxidation-induced Ge condensation process have been comprehensively investigated as a function of several parameters (SiGe thickness, Ge fraction, oxidation temperature, and oxidation time). Final SiGe thickness-dependent relaxation ratio was found, i.e., complete relaxation for thick (<100 nm) SGOI layers, and abrupt decrease in relaxation ratio with decreasing SiGe thickness below 100 nm, e.g., the relaxation ratio of 30% for the SiGe thickness of 30 nm. An improved method combined with H+ irradiation (5× 1015 cm -2) and postannealing (1200°C) has been examined to enhance the stress-relaxation. This achieved a high relaxation ratio (70%) and a low defect density (1× 106 cm-2) in the ultrathin (28 nm) SGOI with a Ge fraction of 30%. A local-area slipping model was proposed, where SiGe/ SiO2 interface slipping occurred during postannealing in local areas surrounded by cross hatches. This model quantitatively explained the enhanced relaxation ratio of the SGOI layers obtained by the Ge condensation method combined with H+ irradiation and postannealing.
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UR - http://www.scopus.com/inward/citedby.url?scp=77957697044&partnerID=8YFLogxK
U2 - 10.1149/1.3486089
DO - 10.1149/1.3486089
M3 - Article
AN - SCOPUS:77957697044
VL - 157
SP - H991-H996
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 11
ER -