Relaxation mechanism of SiGe-on-insulator by oxidation-induced Ge condensation with H+ irradiation and postannealing

Masanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Stress-relaxation phenomena in SiGe-on-insulator (SGOI) layers during the oxidation-induced Ge condensation process have been comprehensively investigated as a function of several parameters (SiGe thickness, Ge fraction, oxidation temperature, and oxidation time). Final SiGe thickness-dependent relaxation ratio was found, i.e., complete relaxation for thick (<100 nm) SGOI layers, and abrupt decrease in relaxation ratio with decreasing SiGe thickness below 100 nm, e.g., the relaxation ratio of 30% for the SiGe thickness of 30 nm. An improved method combined with H+ irradiation (5× 1015 cm -2) and postannealing (1200°C) has been examined to enhance the stress-relaxation. This achieved a high relaxation ratio (70%) and a low defect density (1× 106 cm-2) in the ultrathin (28 nm) SGOI with a Ge fraction of 30%. A local-area slipping model was proposed, where SiGe/ SiO2 interface slipping occurred during postannealing in local areas surrounded by cross hatches. This model quantitatively explained the enhanced relaxation ratio of the SGOI layers obtained by the Ge condensation method combined with H+ irradiation and postannealing.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number11
DOIs
Publication statusPublished - Oct 13 2010

Fingerprint

Condensation
Irradiation
Stress relaxation
Oxidation
Hatches
Defect density
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Relaxation mechanism of SiGe-on-insulator by oxidation-induced Ge condensation with H+ irradiation and postannealing. / Tanaka, Masanori; Sadoh, Taizoh; Miyao, Masanobu.

In: Journal of the Electrochemical Society, Vol. 157, No. 11, 13.10.2010.

Research output: Contribution to journalArticle

@article{ff1a45dab7fd4398b488b02f9e950646,
title = "Relaxation mechanism of SiGe-on-insulator by oxidation-induced Ge condensation with H+ irradiation and postannealing",
abstract = "Stress-relaxation phenomena in SiGe-on-insulator (SGOI) layers during the oxidation-induced Ge condensation process have been comprehensively investigated as a function of several parameters (SiGe thickness, Ge fraction, oxidation temperature, and oxidation time). Final SiGe thickness-dependent relaxation ratio was found, i.e., complete relaxation for thick (<100 nm) SGOI layers, and abrupt decrease in relaxation ratio with decreasing SiGe thickness below 100 nm, e.g., the relaxation ratio of 30{\%} for the SiGe thickness of 30 nm. An improved method combined with H+ irradiation (5× 1015 cm -2) and postannealing (1200°C) has been examined to enhance the stress-relaxation. This achieved a high relaxation ratio (70{\%}) and a low defect density (1× 106 cm-2) in the ultrathin (28 nm) SGOI with a Ge fraction of 30{\%}. A local-area slipping model was proposed, where SiGe/ SiO2 interface slipping occurred during postannealing in local areas surrounded by cross hatches. This model quantitatively explained the enhanced relaxation ratio of the SGOI layers obtained by the Ge condensation method combined with H+ irradiation and postannealing.",
author = "Masanori Tanaka and Taizoh Sadoh and Masanobu Miyao",
year = "2010",
month = "10",
day = "13",
doi = "10.1149/1.3486089",
language = "English",
volume = "157",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

TY - JOUR

T1 - Relaxation mechanism of SiGe-on-insulator by oxidation-induced Ge condensation with H+ irradiation and postannealing

AU - Tanaka, Masanori

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2010/10/13

Y1 - 2010/10/13

N2 - Stress-relaxation phenomena in SiGe-on-insulator (SGOI) layers during the oxidation-induced Ge condensation process have been comprehensively investigated as a function of several parameters (SiGe thickness, Ge fraction, oxidation temperature, and oxidation time). Final SiGe thickness-dependent relaxation ratio was found, i.e., complete relaxation for thick (<100 nm) SGOI layers, and abrupt decrease in relaxation ratio with decreasing SiGe thickness below 100 nm, e.g., the relaxation ratio of 30% for the SiGe thickness of 30 nm. An improved method combined with H+ irradiation (5× 1015 cm -2) and postannealing (1200°C) has been examined to enhance the stress-relaxation. This achieved a high relaxation ratio (70%) and a low defect density (1× 106 cm-2) in the ultrathin (28 nm) SGOI with a Ge fraction of 30%. A local-area slipping model was proposed, where SiGe/ SiO2 interface slipping occurred during postannealing in local areas surrounded by cross hatches. This model quantitatively explained the enhanced relaxation ratio of the SGOI layers obtained by the Ge condensation method combined with H+ irradiation and postannealing.

AB - Stress-relaxation phenomena in SiGe-on-insulator (SGOI) layers during the oxidation-induced Ge condensation process have been comprehensively investigated as a function of several parameters (SiGe thickness, Ge fraction, oxidation temperature, and oxidation time). Final SiGe thickness-dependent relaxation ratio was found, i.e., complete relaxation for thick (<100 nm) SGOI layers, and abrupt decrease in relaxation ratio with decreasing SiGe thickness below 100 nm, e.g., the relaxation ratio of 30% for the SiGe thickness of 30 nm. An improved method combined with H+ irradiation (5× 1015 cm -2) and postannealing (1200°C) has been examined to enhance the stress-relaxation. This achieved a high relaxation ratio (70%) and a low defect density (1× 106 cm-2) in the ultrathin (28 nm) SGOI with a Ge fraction of 30%. A local-area slipping model was proposed, where SiGe/ SiO2 interface slipping occurred during postannealing in local areas surrounded by cross hatches. This model quantitatively explained the enhanced relaxation ratio of the SGOI layers obtained by the Ge condensation method combined with H+ irradiation and postannealing.

UR - http://www.scopus.com/inward/record.url?scp=77957697044&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957697044&partnerID=8YFLogxK

U2 - 10.1149/1.3486089

DO - 10.1149/1.3486089

M3 - Article

AN - SCOPUS:77957697044

VL - 157

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -