Relaxation process of ion irradiation defects in IV-semiconductors

Y. Murakami, M. Miyata, A. Kenjo, Taizoh Sadoh, M. Miyao

Research output: Contribution to journalConference article

Abstract

Relaxation process of ion irradiation defects in IV-semiconductors (Si, Si0.85Ge0.15, Ge, and heavily P-doped ( ∼ 10 20 cm-3) n+-Si) was investigated. The IV-semiconductors were irradiated with 25 keV Ar+ ions (dose: 1 × 1013-1 × 1016 cm-2, dose rate: 3 × 1011-6 × 1012 cm-2 s -1, temperature: 25-250 °C). Amorphicity was comprehensively evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures around 100 °C, dose rate dependence of amorphicity was remarkably observed. The Arrhenius plot of critical dose rate, at which defect generation and annihilation rates were balanced, showed that activation energies for defect relaxation process were 0.43, 0.51, 0.88, and 0.18 eV for Si, Si0.85Ge0.15, Ge, and n+-Si, respectively. These results suggest that defect relaxation process is governed by migration of V0 in Si, Si0.85Ge0.15, and Ge, while V 2- in n+-Si. The migration energy of V0 in Si0.85Ge0.15 obeys the Vegard's law.

Original languageEnglish
Pages (from-to)362-365
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume102
Issue number1-3
DOIs
Publication statusPublished - Sep 15 2003
EventE-MRS 2002 Symposium E - Strasbourg, France
Duration: Jun 18 2002Jun 21 2002

Fingerprint

Relaxation processes
Ion bombardment
ion irradiation
Semiconductor materials
dosage
Defects
defects
Arrhenius plots
Spectroscopic ellipsometry
ellipsometry
Activation energy
plots
Ions
activation energy
Temperature
temperature
ions
energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Relaxation process of ion irradiation defects in IV-semiconductors. / Murakami, Y.; Miyata, M.; Kenjo, A.; Sadoh, Taizoh; Miyao, M.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 102, No. 1-3, 15.09.2003, p. 362-365.

Research output: Contribution to journalConference article

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AU - Miyata, M.

AU - Kenjo, A.

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AU - Miyao, M.

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N2 - Relaxation process of ion irradiation defects in IV-semiconductors (Si, Si0.85Ge0.15, Ge, and heavily P-doped ( ∼ 10 20 cm-3) n+-Si) was investigated. The IV-semiconductors were irradiated with 25 keV Ar+ ions (dose: 1 × 1013-1 × 1016 cm-2, dose rate: 3 × 1011-6 × 1012 cm-2 s -1, temperature: 25-250 °C). Amorphicity was comprehensively evaluated by using spectroscopic ellipsometry. For samples irradiated at temperatures around 100 °C, dose rate dependence of amorphicity was remarkably observed. The Arrhenius plot of critical dose rate, at which defect generation and annihilation rates were balanced, showed that activation energies for defect relaxation process were 0.43, 0.51, 0.88, and 0.18 eV for Si, Si0.85Ge0.15, Ge, and n+-Si, respectively. These results suggest that defect relaxation process is governed by migration of V0 in Si, Si0.85Ge0.15, and Ge, while V 2- in n+-Si. The migration energy of V0 in Si0.85Ge0.15 obeys the Vegard's law.

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