Reliability and degradation behavior of a InGaAsP/InP waveguide photodiode for subscriber systems

Hiroyasu Mawatari, Mitsuo Fukuda, Kazutoshi Kato, Atsuo Kozen, Masahiro Yuda, Tatsuya Takeshita, Naoto Uchida, Hiromu Toba

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

A selective-area impurity-doped planar edge-coupled waveguide photodiode (SIMPLE-WGPD) has a long lifetime for subscriber system use and the device life is determined by the perimeter of the pn-junction. The thickness of the absorption layer is 3 μm. The pn-junction is formed at the absorption layer by means of Zn diffusion from the surface. The facet at which the input light received is formed by cleavage and coated with SiN, filmed formed by plasma enhanced chemical vapor deposition. The responsivity is about 0.8 A/W at bias of -2 V. On these SIMPLE-WGPDs, several kinds of reliability tests were performed.

Original languageEnglish
Number of pages1
Publication statusPublished - Jan 1 1997
Externally publishedYes
EventProceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim - Chiba, Jpn
Duration: Jul 14 1997Jul 18 1997

Other

OtherProceedings of the 1997 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim
CityChiba, Jpn
Period7/14/977/18/97

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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