Reliability of GaN-HEMTs for high-voltage switching applications

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

This paper reports that the maximum electric field is a dominant factor for reliability in high-voltage GaN-HEMTs. Four types of the GaN-HEMT with different field plate (FP) structures were tested in continuous switching operation mode to analyze the degradation mechanism and the optimal device design. From the on-resistance degradation dependence on the FP structure, we extract that the gate-edge electric field strongly affects the increase of the dynamic on-resistance. Although the FP-edge field also increased the dynamic on-resistance, its influence was weaker than that of the gate-edge field. The optimal FP structure minimizes the increase of the dynamic on-resistance by reducing the electric field peaks and showed no degradation of power efficiency at the boost converter operation.

Original languageEnglish
Title of host publication2011 International Reliability Physics Symposium, IRPS 2011
Pages4E.1.1-4E.1.5
DOIs
Publication statusPublished - Jun 23 2011
Externally publishedYes
Event49th International Reliability Physics Symposium, IRPS 2011 - Monterey, CA, United States
Duration: Apr 10 2011Apr 14 2011

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference49th International Reliability Physics Symposium, IRPS 2011
CountryUnited States
CityMonterey, CA
Period4/10/114/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Saito, W. (2011). Reliability of GaN-HEMTs for high-voltage switching applications. In 2011 International Reliability Physics Symposium, IRPS 2011 (pp. 4E.1.1-4E.1.5). [5784510] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2011.5784510