Removal rate simulation of dissolution-type electrochemical mechanical polishing

Akira Fukuda, Akira Kodera, Yasushi Toma, Tsukuru Suzuki, Hirokuni Hiyama, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi

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2 Citations (Scopus)

Abstract

A new method for simulating the Cu removal rate in electrochemical mechanical polishing (ECMP) based on the dissolution-type polishing mechanism was developed. The effect of a protective layer on the Cu removal rate was considered in this method because the protective layer is a key element in the dissolution-type polishing mechanism. This method was used to simulate the removal rate in a rotary-type ECMP system. The simulations accurately provided the dependence of the Cu removal rate on the aperture ratio. Furthermore, the dependence of the Cu removal rate on the aperture ratio was described with respect to changes in the average protective layer amount with time. Regarding the dependence of the Cu removal rate on the aperture diameter, however, a discrepancy was observed between the simulation and experimental results because this method did not take into account the effect of the aperture diameter on the electrolyte-filling ratio in apertures.

Original languageEnglish
Pages (from-to)767011-767018
Number of pages8
JournalJapanese journal of applied physics
Volume49
Issue number7 PART 1
DOIs
Publication statusPublished - Jul 1 2010

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Fukuda, A., Kodera, A., Toma, Y., Suzuki, T., Hiyama, H., Doi, T., Kurokawa, S., & Ohnishi, O. (2010). Removal rate simulation of dissolution-type electrochemical mechanical polishing. Japanese journal of applied physics, 49(7 PART 1), 767011-767018. https://doi.org/10.1143/JJAP.49.076701