Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”

Teruaki Motooka, Ken Nishihira, Shinji Munetoh, Koji Moriguchi, Akira Shintani

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2 Citations (Scopus)

Abstract

We have investigated atomic diffusion properties near the amorphous/crystalline (formula presented) Si(001) interface during solid-phase epitaxy (SPE) of Si based on molecular-dynamics simulations using the Tersoff potential. It has been found that the mean-square displacement of the Si atoms in an amorphous layer with a thickness of 10 Å at the (formula presented) interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crystallization of amorphous Si during SPE growth.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number23
DOIs
Publication statusPublished - Jan 1 2001

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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