Reply to “Comment on ‘Molecular-dynamics simulations of solid-phase epitaxy of Si: Growth mechanisms’ ”

Teruaki Motooka, Ken Nishihira, Shinji Munetoh, Koji Moriguchi, Akira Shintani

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    We have investigated atomic diffusion properties near the amorphous/crystalline (formula presented) Si(001) interface during solid-phase epitaxy (SPE) of Si based on molecular-dynamics simulations using the Tersoff potential. It has been found that the mean-square displacement of the Si atoms in an amorphous layer with a thickness of 10 Å at the (formula presented) interface is larger than that in bulk amorphous Si. This can be attributed to local heating due to crystallization of amorphous Si during SPE growth.

    Original languageEnglish
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume63
    Issue number23
    DOIs
    Publication statusPublished - Jan 1 2001

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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