Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures

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Abstract

Leakage currents in epitaxial ferroelectric/perovskite-conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed.

Original languageEnglish
Pages (from-to)28
Number of pages1
JournalApplied Physics Letters
Publication statusPublished - 1995
Externally publishedYes

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leakage
conductors
hysteresis
diodes
conductivity
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{031d6a96807d4c00836bbe87188eb360,
title = "Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures",
abstract = "Leakage currents in epitaxial ferroelectric/perovskite-conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed.",
author = "Yukio Watanabe",
year = "1995",
language = "English",
pages = "28",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Reproducible memory effect in the leakage current of epitaxial ferroelectric/conductive perovskite heterostructures

AU - Watanabe, Yukio

PY - 1995

Y1 - 1995

N2 - Leakage currents in epitaxial ferroelectric/perovskite-conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed.

AB - Leakage currents in epitaxial ferroelectric/perovskite-conductor heterostructures reproducibly show diode properties having hysteresis. The hysteresis appears in forward bias, which is positive for electron (n) type conductors and negative for hole (p) type conductors. The hysteresis is due to the increase of conductivity by the forward bias current, which exhibits the memory retention for more than an hour. The write and erase speeds of the diode and the origin of the effect are discussed.

UR - http://www.scopus.com/inward/record.url?scp=36448999295&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36448999295&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36448999295

SP - 28

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -