An examination of typical switching experiments shows that the performances of the resistance switching in transition-metal oxides vary widely and depend on the details of each experiment. Conventional defect mechanisms, such as oxygen vacancies, work in some experiments. However, by comparing the macroscopic and the nanometer-scale characteristics and switching, we show here that other experiments indicate the possible existence of a more intrinsic physically new mechanism. Switching, Resistance, Ferroelectric, Conductivity, Defect, Phase transition, RRAM.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Issue number||2 PART I|
|Publication status||Published - Aug 1 2007|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)