TY - JOUR
T1 - Resistance switching in view of electron hole dynamics in ferroelectric related oxides
AU - Watanabe, Yukio
AU - Kaku, Shigeru
AU - Yamato, Mizuki
AU - Matusmoto, Daisuke
PY - 2007/8/1
Y1 - 2007/8/1
N2 - An examination of typical switching experiments shows that the performances of the resistance switching in transition-metal oxides vary widely and depend on the details of each experiment. Conventional defect mechanisms, such as oxygen vacancies, work in some experiments. However, by comparing the macroscopic and the nanometer-scale characteristics and switching, we show here that other experiments indicate the possible existence of a more intrinsic physically new mechanism. Switching, Resistance, Ferroelectric, Conductivity, Defect, Phase transition, RRAM.
AB - An examination of typical switching experiments shows that the performances of the resistance switching in transition-metal oxides vary widely and depend on the details of each experiment. Conventional defect mechanisms, such as oxygen vacancies, work in some experiments. However, by comparing the macroscopic and the nanometer-scale characteristics and switching, we show here that other experiments indicate the possible existence of a more intrinsic physically new mechanism. Switching, Resistance, Ferroelectric, Conductivity, Defect, Phase transition, RRAM.
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M3 - Article
AN - SCOPUS:34548434871
SN - 0374-4884
VL - 51
SP - 815
EP - 818
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 2 PART I
ER -