Resistance switching in view of electron hole dynamics in ferroelectric related oxides

Yukio Watanabe, Shigeru Kaku, Mizuki Yamato, Daisuke Matusmoto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

An examination of typical switching experiments shows that the performances of the resistance switching in transition-metal oxides vary widely and depend on the details of each experiment. Conventional defect mechanisms, such as oxygen vacancies, work in some experiments. However, by comparing the macroscopic and the nanometer-scale characteristics and switching, we show here that other experiments indicate the possible existence of a more intrinsic physically new mechanism. Switching, Resistance, Ferroelectric, Conductivity, Defect, Phase transition, RRAM.

Original languageEnglish
Pages (from-to)815-818
Number of pages4
JournalJournal of the Korean Physical Society
Volume51
Issue number2 PART I
Publication statusPublished - Aug 1 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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