Resistivity anomaly due to valence transition in Eu compounds

Hirofumi Wada, Akihiro Mitsuda, A. Nakamura, M. Shiga, J. D. Thompson

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The temperature dependence of electrical resistivity, ρ, was examined for the intermediate valence (IV) system EuNi2(Ge1-xSix)2. Results show that the IV compounds exhibit a characteristic peak in the ρ-T curve. The origin of the peak is discussed.

Original languageEnglish
Pages (from-to)132-133
Number of pages2
JournalPhysica B: Condensed Matter
Volume281-282
DOIs
Publication statusPublished - Jun 1 2000
Externally publishedYes
EventYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Jpn
Duration: Aug 24 1999Aug 28 1999

Fingerprint

anomalies
valence
electrical resistivity
Temperature
temperature dependence
curves

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Resistivity anomaly due to valence transition in Eu compounds. / Wada, Hirofumi; Mitsuda, Akihiro; Nakamura, A.; Shiga, M.; Thompson, J. D.

In: Physica B: Condensed Matter, Vol. 281-282, 01.06.2000, p. 132-133.

Research output: Contribution to journalConference article

Wada, Hirofumi ; Mitsuda, Akihiro ; Nakamura, A. ; Shiga, M. ; Thompson, J. D. / Resistivity anomaly due to valence transition in Eu compounds. In: Physica B: Condensed Matter. 2000 ; Vol. 281-282. pp. 132-133.
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