Abstract
The resistivity responses of layered compound TiS2 to oxygen and nitrogen gases were measured around room temperature. The resistivity showed a selective and reversible response to oxygen. This may be due to the fact that oxygen intercalates into van der Waals gaps in the layered structure of TiS2. The resistivity showed an increment of 1% oxygen partial pressure in 10 min at 50 °C. From the comparison with a commercial oxygen gas sensor, it was shown to operate at a lower temperature with the response time as short as the commercial one.
| Original language | English |
|---|---|
| Pages (from-to) | 1069-1073 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 33 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1994 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Kishiro, K., Takemoto, S., Kuriyaki, H., & Hirakawa, K. (1994). Resistivity response to oxygen of transition metal dichalcogenide TiS2. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 33(2), 1069-1073. https://doi.org/10.1143/jjap.33.1069