Resistivity response to oxygen of transition metal dichalcogenide TiS2

Koichi Kishiro, Satoshi Takemoto, Hisao Kuriyaki, Kazuyoshi Hirakawa

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The resistivity responses of layered compound TiS2 to oxygen and nitrogen gases were measured around room temperature. The resistivity showed a selective and reversible response to oxygen. This may be due to the fact that oxygen intercalates into van der Waals gaps in the layered structure of TiS2. The resistivity showed an increment of 1% oxygen partial pressure in 10 min at 50 °C. From the comparison with a commercial oxygen gas sensor, it was shown to operate at a lower temperature with the response time as short as the commercial one.

Original languageEnglish
Pages (from-to)1069-1073
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume33
Issue number2
Publication statusPublished - Feb 1 1994

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Transition metals
transition metals
electrical resistivity
Oxygen
oxygen
Oxygen sensors
Chemical sensors
Partial pressure
gases
partial pressure
Nitrogen
Temperature
nitrogen
Gases
sensors
room temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Resistivity response to oxygen of transition metal dichalcogenide TiS2. / Kishiro, Koichi; Takemoto, Satoshi; Kuriyaki, Hisao; Hirakawa, Kazuyoshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 33, No. 2, 01.02.1994, p. 1069-1073.

Research output: Contribution to journalArticle

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