Resistivity response to oxygen of transition metal dichalcogenide TiS2

Koichi Kishiro; Satoshi Takemoto; Hisao Kuriyaki; Kazuyoshi Hirakawa

doi:10.1143/jjap.33.1069

Resistivity response to oxygen of transition metal dichalcogenide TiS₂

Koichi Kishiro, Satoshi Takemoto, Hisao Kuriyaki, Kazuyoshi Hirakawa

Electronic Devices

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The resistivity responses of layered compound TiS₂ to oxygen and nitrogen gases were measured around room temperature. The resistivity showed a selective and reversible response to oxygen. This may be due to the fact that oxygen intercalates into van der Waals gaps in the layered structure of TiS₂. The resistivity showed an increment of 1% oxygen partial pressure in 10 min at 50 °C. From the comparison with a commercial oxygen gas sensor, it was shown to operate at a lower temperature with the response time as short as the commercial one.

Original language	English
Pages (from-to)	1069-1073
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	33
Issue number	2
DOIs	https://doi.org/10.1143/jjap.33.1069
Publication status	Published - 1994

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "The resistivity responses of layered compound TiS2 to oxygen and nitrogen gases were measured around room temperature. The resistivity showed a selective and reversible response to oxygen. This may be due to the fact that oxygen intercalates into van der Waals gaps in the layered structure of TiS2. The resistivity showed an increment of 1% oxygen partial pressure in 10 min at 50 °C. From the comparison with a commercial oxygen gas sensor, it was shown to operate at a lower temperature with the response time as short as the commercial one.",

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AU - Takemoto, Satoshi

AU - Kuriyaki, Hisao

AU - Hirakawa, Kazuyoshi

PY - 1994

Y1 - 1994

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AB - The resistivity responses of layered compound TiS2 to oxygen and nitrogen gases were measured around room temperature. The resistivity showed a selective and reversible response to oxygen. This may be due to the fact that oxygen intercalates into van der Waals gaps in the layered structure of TiS2. The resistivity showed an increment of 1% oxygen partial pressure in 10 min at 50 °C. From the comparison with a commercial oxygen gas sensor, it was shown to operate at a lower temperature with the response time as short as the commercial one.

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Resistivity response to oxygen of transition metal dichalcogenide TiS₂

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