Resonant Raman scattering on self-assembled GaN quantum dots

M. Kuball, J. Gleize, Satoru Tanaka, Yoshinobu Aoyagi

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Self-assembled GaN quantum dots grown on Al0.15Ga0.85N using Si as antisurfactant have been investigated by resonant Raman scattering. Phonons of GaN quantum dots of different sizes and the Al0.15Ga0.85N barrier layer were probed selectively by varying the laser excitation energy from 3.53 to 5.08 eV. Phonon confinement effects were studied on GaN quantum dots of 2-3 nm height. We show that although grown using Si (a common donor for GaN) as an antisurfactant, only a small electron concentration is present in the GaN quantum dots. Implications on the role of Si for the formation of the GaN quantum dots will be discussed.

Original languageEnglish
Pages (from-to)987-989
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
DOIs
Publication statusPublished - Feb 12 2001
Externally publishedYes

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quantum dots
Raman spectra
barrier layers
phonons
excitation
lasers
electrons
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Resonant Raman scattering on self-assembled GaN quantum dots. / Kuball, M.; Gleize, J.; Tanaka, Satoru; Aoyagi, Yoshinobu.

In: Applied Physics Letters, Vol. 78, No. 7, 12.02.2001, p. 987-989.

Research output: Contribution to journalArticle

Kuball, M. ; Gleize, J. ; Tanaka, Satoru ; Aoyagi, Yoshinobu. / Resonant Raman scattering on self-assembled GaN quantum dots. In: Applied Physics Letters. 2001 ; Vol. 78, No. 7. pp. 987-989.
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