Resonant Raman scattering on self-assembled GaN quantum dots

M. Kuball; J. Gleize; Satoru Tanaka; Yoshinobu Aoyagi

doi:10.1063/1.1347386

Resonant Raman scattering on self-assembled GaN quantum dots

M. Kuball, J. Gleize, Satoru Tanaka, Yoshinobu Aoyagi

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Self-assembled GaN quantum dots grown on Al_0.15Ga_0.85N using Si as antisurfactant have been investigated by resonant Raman scattering. Phonons of GaN quantum dots of different sizes and the Al_0.15Ga_0.85N barrier layer were probed selectively by varying the laser excitation energy from 3.53 to 5.08 eV. Phonon confinement effects were studied on GaN quantum dots of 2-3 nm height. We show that although grown using Si (a common donor for GaN) as an antisurfactant, only a small electron concentration is present in the GaN quantum dots. Implications on the role of Si for the formation of the GaN quantum dots will be discussed.

Original language	English
Pages (from-to)	987-989
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	7
DOIs	https://doi.org/10.1063/1.1347386
Publication status	Published - Feb 12 2001
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1347386

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abstract = "Self-assembled GaN quantum dots grown on Al0.15Ga0.85N using Si as antisurfactant have been investigated by resonant Raman scattering. Phonons of GaN quantum dots of different sizes and the Al0.15Ga0.85N barrier layer were probed selectively by varying the laser excitation energy from 3.53 to 5.08 eV. Phonon confinement effects were studied on GaN quantum dots of 2-3 nm height. We show that although grown using Si (a common donor for GaN) as an antisurfactant, only a small electron concentration is present in the GaN quantum dots. Implications on the role of Si for the formation of the GaN quantum dots will be discussed.",

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AU - Kuball, M.

AU - Gleize, J.

AU - Tanaka, Satoru

AU - Aoyagi, Yoshinobu

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Self-assembled GaN quantum dots grown on Al0.15Ga0.85N using Si as antisurfactant have been investigated by resonant Raman scattering. Phonons of GaN quantum dots of different sizes and the Al0.15Ga0.85N barrier layer were probed selectively by varying the laser excitation energy from 3.53 to 5.08 eV. Phonon confinement effects were studied on GaN quantum dots of 2-3 nm height. We show that although grown using Si (a common donor for GaN) as an antisurfactant, only a small electron concentration is present in the GaN quantum dots. Implications on the role of Si for the formation of the GaN quantum dots will be discussed.

AB - Self-assembled GaN quantum dots grown on Al0.15Ga0.85N using Si as antisurfactant have been investigated by resonant Raman scattering. Phonons of GaN quantum dots of different sizes and the Al0.15Ga0.85N barrier layer were probed selectively by varying the laser excitation energy from 3.53 to 5.08 eV. Phonon confinement effects were studied on GaN quantum dots of 2-3 nm height. We show that although grown using Si (a common donor for GaN) as an antisurfactant, only a small electron concentration is present in the GaN quantum dots. Implications on the role of Si for the formation of the GaN quantum dots will be discussed.

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Resonant Raman scattering on self-assembled GaN quantum dots

Abstract

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