TY - JOUR
T1 - Retention and release mechanisms of tritium loaded in plasma-sprayed tungsten coatings by plasma exposure
AU - Otsuka, T.
AU - Tanabe, T.
AU - Tokunaga, K.
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - Depth profiles of tritium (T) loaded by gas and plasma in tungsten (W) coatings on ferritic steels have been examined by using a tritium imaging plate technique and their changes during storage and after annealing have been monitored. The depth profiles of T consisted of 4 components, (I) T trapped at impurities and defects newly introduced in the near surface region of the coating by plasma loading, (II) T trapped at the inner surfaces of the grains and dissolved in the grains resulting in a flat depth profile throughout the whole coating, (III) T dissolved and diffused into the substrate giving a decaying profile, and (IV) T trapped at the backside surface of the substrate. The results support that retention of T is mainly caused by pore diffusion of gaseous T followed by dissolution and trapping in/at each W grain, and dissolution of T into the F82H substrate to allow permeation. Release of T proceeds in an opposite way of retention but each component desorbs independently.
AB - Depth profiles of tritium (T) loaded by gas and plasma in tungsten (W) coatings on ferritic steels have been examined by using a tritium imaging plate technique and their changes during storage and after annealing have been monitored. The depth profiles of T consisted of 4 components, (I) T trapped at impurities and defects newly introduced in the near surface region of the coating by plasma loading, (II) T trapped at the inner surfaces of the grains and dissolved in the grains resulting in a flat depth profile throughout the whole coating, (III) T dissolved and diffused into the substrate giving a decaying profile, and (IV) T trapped at the backside surface of the substrate. The results support that retention of T is mainly caused by pore diffusion of gaseous T followed by dissolution and trapping in/at each W grain, and dissolution of T into the F82H substrate to allow permeation. Release of T proceeds in an opposite way of retention but each component desorbs independently.
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U2 - 10.1016/j.jnucmat.2013.01.229
DO - 10.1016/j.jnucmat.2013.01.229
M3 - Article
AN - SCOPUS:84885419364
SN - 0022-3115
VL - 438
SP - S1048-S1051
JO - Journal of Nuclear Materials
JF - Journal of Nuclear Materials
IS - SUPPL
ER -