Retraction: Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) (Applied Physics Letters (2018) 112 (242103) DOI: 10.1063/1.5024307)

Chang Xu, Hongmiao Gao, Takayuki Sugino, Masanobu Miyao, Taizoh Sadoh

Research output: Contribution to journalComment/debate

Abstract

The authors wish to retract their publication.1 This action is taken because an error in film thicknesses used in determining the mobilities reported in the manuscript resulted in mobility overestimates by factors of two, three, and four for the films with thicknesses of 100, 150, and 200 nm, respectively. Since the high value of the mobility was the central result of the manuscript and drove much of the discussion, the authors are retracting the publication. The authors sincerely apologize for any inconvenience this mistake may have caused.

Original languageEnglish
Article number029901
JournalApplied Physics Letters
Volume113
Issue number2
DOIs
Publication statusPublished - Jul 9 2018

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carrier mobility
solid phases
insulators
nucleation
crystallization
physics
film thickness

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Retraction: Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) (Applied Physics Letters (2018) 112 (242103) DOI: 10.1063/1.5024307)",
abstract = "The authors wish to retract their publication.1 This action is taken because an error in film thicknesses used in determining the mobilities reported in the manuscript resulted in mobility overestimates by factors of two, three, and four for the films with thicknesses of 100, 150, and 200 nm, respectively. Since the high value of the mobility was the central result of the manuscript and drove much of the discussion, the authors are retracting the publication. The authors sincerely apologize for any inconvenience this mistake may have caused.",
author = "Chang Xu and Hongmiao Gao and Takayuki Sugino and Masanobu Miyao and Taizoh Sadoh",
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T1 - Retraction

T2 - Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm2/V s) (Applied Physics Letters (2018) 112 (242103) DOI: 10.1063/1.5024307)

AU - Xu, Chang

AU - Gao, Hongmiao

AU - Sugino, Takayuki

AU - Miyao, Masanobu

AU - Sadoh, Taizoh

PY - 2018/7/9

Y1 - 2018/7/9

N2 - The authors wish to retract their publication.1 This action is taken because an error in film thicknesses used in determining the mobilities reported in the manuscript resulted in mobility overestimates by factors of two, three, and four for the films with thicknesses of 100, 150, and 200 nm, respectively. Since the high value of the mobility was the central result of the manuscript and drove much of the discussion, the authors are retracting the publication. The authors sincerely apologize for any inconvenience this mistake may have caused.

AB - The authors wish to retract their publication.1 This action is taken because an error in film thicknesses used in determining the mobilities reported in the manuscript resulted in mobility overestimates by factors of two, three, and four for the films with thicknesses of 100, 150, and 200 nm, respectively. Since the high value of the mobility was the central result of the manuscript and drove much of the discussion, the authors are retracting the publication. The authors sincerely apologize for any inconvenience this mistake may have caused.

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U2 - 10.1063/1.5046407

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