Retraction: Nucleation-controlled low-temperature solid-phase crystallization for Sn-doped polycrystalline-Ge film on insulator with high carrier mobility (∼550 cm²/V s) (Applied Physics Letters (2018) 112 (242103) DOI: 10.1063/1.5024307)

The authors wish to retract their publication.1 This action is taken because an error in film thicknesses used in determining the mobilities reported in the manuscript resulted in mobility overestimates by factors of two, three, and four for the films with thicknesses of 100, 150, and 200 nm, respectively. Since the high value of the mobility was the central result of the manuscript and drove much of the discussion, the authors are retracting the publication. The authors sincerely apologize for any inconvenience this mistake may have caused.