Reversible phase transitions in the pseudomorphic 7×3 -hex in layer on Si(111)

A. A. Saranin, A. V. Zotov, M. Kishida, Y. Murata, S. Honda, M. Katayama, K. Oura, D. V. Gruznev, A. Visikovskiy, H. Tochihara

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Abstract

Using scanning tunneling microscopy, reversible phase transitions have been detected in the modulated pseudomorphic In monolayer on the Si(111) surface. It has been found that the room-temperature quasihexagonal 7×3 structure is transformed into the 7×7 structure during cooling in the temperature range from 265 to 225 K. Further cooling results in developing long-range modulations in the In layer, including formation of the chevron-type structure with 67×7 periodicity, the ordered arrays with regular antiphase domain boundaries with local 37 ×7, and 27×7 periodicity and the chained-ring structure with 10 3 3× 40 3 3 periodicity, which is believed to originate from the 5 3 3× 5 3 3 structure occurring at room temperature near surface defects and at domain boundaries of the original 7×3-In phase.

Original languageEnglish
Article number035436
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number3
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Saranin, A. A., Zotov, A. V., Kishida, M., Murata, Y., Honda, S., Katayama, M., Oura, K., Gruznev, D. V., Visikovskiy, A., & Tochihara, H. (2006). Reversible phase transitions in the pseudomorphic 7×3 -hex in layer on Si(111). Physical Review B - Condensed Matter and Materials Physics, 74(3), [035436]. https://doi.org/10.1103/PhysRevB.74.035436