Reversible phase transitions in the pseudomorphic 7×3 -hex in layer on Si(111)

A. A. Saranin, A. V. Zotov, M. Kishida, Y. Murata, S. Honda, M. Katayama, K. Oura, D. V. Gruznev, Anton Visikovskiy, H. Tochihara

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Using scanning tunneling microscopy, reversible phase transitions have been detected in the modulated pseudomorphic In monolayer on the Si(111) surface. It has been found that the room-temperature quasihexagonal 7×3 structure is transformed into the 7×7 structure during cooling in the temperature range from 265 to 225 K. Further cooling results in developing long-range modulations in the In layer, including formation of the chevron-type structure with 67×7 periodicity, the ordered arrays with regular antiphase domain boundaries with local 37 ×7, and 27×7 periodicity and the chained-ring structure with 10 3 3× 40 3 3 periodicity, which is believed to originate from the 5 3 3× 5 3 3 structure occurring at room temperature near surface defects and at domain boundaries of the original 7×3-In phase.

Original languageEnglish
Article number035436
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number3
DOIs
Publication statusPublished - Aug 3 2006

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periodic variations
Phase transitions
Cooling
cooling
antiphase boundaries
ring structures
Surface defects
Scanning tunneling microscopy
room temperature
surface defects
Temperature
scanning tunneling microscopy
Monolayers
Modulation
modulation
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Saranin, A. A., Zotov, A. V., Kishida, M., Murata, Y., Honda, S., Katayama, M., ... Tochihara, H. (2006). Reversible phase transitions in the pseudomorphic 7×3 -hex in layer on Si(111). Physical Review B - Condensed Matter and Materials Physics, 74(3), [035436]. https://doi.org/10.1103/PhysRevB.74.035436

Reversible phase transitions in the pseudomorphic 7×3 -hex in layer on Si(111). / Saranin, A. A.; Zotov, A. V.; Kishida, M.; Murata, Y.; Honda, S.; Katayama, M.; Oura, K.; Gruznev, D. V.; Visikovskiy, Anton; Tochihara, H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 74, No. 3, 035436, 03.08.2006.

Research output: Contribution to journalArticle

Saranin, AA, Zotov, AV, Kishida, M, Murata, Y, Honda, S, Katayama, M, Oura, K, Gruznev, DV, Visikovskiy, A & Tochihara, H 2006, 'Reversible phase transitions in the pseudomorphic 7×3 -hex in layer on Si(111)', Physical Review B - Condensed Matter and Materials Physics, vol. 74, no. 3, 035436. https://doi.org/10.1103/PhysRevB.74.035436
Saranin, A. A. ; Zotov, A. V. ; Kishida, M. ; Murata, Y. ; Honda, S. ; Katayama, M. ; Oura, K. ; Gruznev, D. V. ; Visikovskiy, Anton ; Tochihara, H. / Reversible phase transitions in the pseudomorphic 7×3 -hex in layer on Si(111). In: Physical Review B - Condensed Matter and Materials Physics. 2006 ; Vol. 74, No. 3.
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