The poor reliability of the GeO2/Ge stack is improved by appropriate cation doping [e.g., Yttrium (Y)-doping] into amorphous GeO2 as a result of the enhancement of the GeO2 network structure stability. In this paper, we discuss the impact of Y-doping on structural modulation of GeO2 on a Ge substrate in thermal treatment. By doping a small amount of Y into amorphous GeO2, the crystallization of GeO2 to alpha -quartz and alpha -cristobalite structures is efficiently suppressed without toughening the local Ge-O bond. This is direct evidence of rigidity enhancement of the GeO2 tetrahedral network structure by cation doping.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering