Rigidity enhancement of GeO2 by y doping for reliable Ge gate stacks

Tomonori Nishimura, Xiaoyu Tang, Takeaki Yajima, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The poor reliability of GeO2/Ge stack is improved by appropriate cation (e.g. Sc or Y) doping into GeO2 and it is considered to be thanks to the enhancement of GeO2 network rigidity. We discuss the impact of cation doping on structural modulation of GeO2 on Ge substrate in the thermal treatment. By doping a small amount of Y into GeO2, the crystallization of GeO2 from amorphous to α-quartz structure is efficiently suppressed. It is a direct evidence of modulation of GeO2 network rigidity by the cation doping.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages196-198
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - Jul 26 2018
Externally publishedYes
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: Mar 13 2018Mar 16 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/TerritoryJapan
CityKobe
Period3/13/183/16/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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