Role of chlorine in the dynamics of GaN(0 0 0 1) surface during HVPE GaN growth-Ab initio study

Chemistry

• Surface 100%
• Desorption 75%
• Energy Barrier 41%
• Hydrogen Chloride 41%
• Molecule 33%
• Atom 25%
• Chlorine 25%
• Procedure 16%
• Hydrogen Atom 16%
• Chlorine Atom 16%
• Vapor Phase Epitaxy 16%
• Density Functional Theory 8%
• Hydrogen 8%
• Physical Adsorption 8%

Physics

• Molecules 33%
• Atoms 25%
• Growth 16%
• Adsorption 16%
• Vapor Phase Epitaxy 16%
• Encounters 16%
• Density Functional Theory 8%
• Hydrogen 8%
• Position (Location) 8%
• Distance 8%
• Physics 8%
• Protection 8%
• Gallium 8%

Material Science

• Surface 100%